Semiconductor module with a dielectric layer including a fluorocarbon compound on a chip

1. A semiconductor module comprising:

a semiconductor chip comprising at least one contact pad;

a first dielectric layer which is applied to the semiconductor chip and comprises a fluorocarbon compound reinforced with a glass fabric and a thickness of less than or equal to 9.0 μm; and

a first wiring layer which is applied to the semiconductor chip.

2. The semiconductor module of claim 1 , where the first wiring layer is applied to the first dielectric layer.

3. The semiconductor module of claim 1 , where the first wiring layer is electrically connected to the at least one contact pad.

4. The semiconductor module of claim 1 , further comprising a second dielectric layer, where the second dielectric layer is applied to the first wiring layer.

5. The semiconductor module of claim 4 , where the second dielectric layer comprises a fluorocarbon compound.

6. The semiconductor module of claim 4 , further comprising a second wiring layer, where the second wiring layer is applied to the second dielectric layer.

7. The semiconductor module of claim 1 , where the fluorocarbon compound is at least one of a fluorohydrocarbon compound or a polymer.

8. The semiconductor module of claim 1 , where the fluorocarbon compound comprises a dielectric constant of approximately less than 3.2.

9. The semiconductor module of claim 8 , where the fluorocarbon compound comprises a dielectric constant approximately between 1.8 and 2.8.

10. The semiconductor module of claim 1 , where the semiconductor chip is surrounded by an encapsulation element.

11. The semiconductor module of claim 10 , where at least one of the first dielectric layer and the first wiring layer are applied to the encapsulation element.

12. The semiconductor module of claim 10 , where the encapsulation element forms of a disc.

13. The semiconductor module of claim 1 , where the semiconductor chip comprises a passivation layer.

14. The semiconductor module of claim 13 , where the passivation layer comprises an inorganic material.

15. The semiconductor module of claim 14 , where the inorganic material is a silicon nitride.

16. The semiconductor module of claim 1 , where the first wiring layer connects the at least one contact pad to at least one external contact element.

17. The semiconductor module of claim 1 , where the fluorocarbon compound is polytetrafluoroethylene.

18. A semiconductor module comprising:

a semiconductor chip comprising at least one contact pad;

a first dielectric layer which is applied to the semiconductor chip and has a dielectric constant of approximately less than 3.2 and a thickness of less than or equal to 9.0 μm;

a first wiring layer which is applied to the semiconductor chip; and

a second dielectric layer applied to the first wiring layer and comprising a fluorocarbon compound.

19. The semiconductor module of claim 18 , the first dielectric layer comprising a dielectric constant of approximately less than 2.8.

20. The semiconductor module of claim 18 , where the first wiring layer is applied to the first dielectric layer.

21. The semiconductor module of claim 18 , where the first wiring layer is electrically connected to the at least one contact pad.

22. The semiconductor module of claim 18 , where the second dielectric layer comprises a dielectric constant of less than 3.2.

23. The semiconductor module of claim 18 , further comprising a second wiring layer, the second wiring layer being applied to the second dielectric layer.

24. The semiconductor module of claim 23 , where at least one of the second dielectric layer and the second wiring layer are applied to the encapsulation element.

25. The semiconductor module of claim 18 , where the semiconductor chip is surrounded by an encapsulation element.

26. The semiconductor module of claim 25 , where at least one of the first dielectric layer and the first wiring layer are applied to the encapsulation element.

27. The semiconductor module of claim 18 , where the semiconductor chip further comprises a passivation layer.

28. The semiconductor module of claim 27 , where the passivation layer comprises an inorganic material.

29. A method of manufacture of a semiconductor module comprising:

producing a semiconductor chip with at least one contact pad;

applying with a thickness of less than or equal to 9.0 μm a first dielectric layer comprising a fluorocarbon compound reinforced with a glass fabric to the semiconductor chip; and

applying a first wiring layer to the semiconductor chip.

30. The method of claim 29 , further comprising applying a second dielectric layer to the first wiring layer.

31. The method of claim 30 , further comprising applying a second wiring layer to the second dielectric layer.

32. The method of claim 30 , where the second dielectric layer comprises a fluorocarbon compound.

33. A method of manufacture of a semiconductor module comprising:

producing an encapsulation element with at least two semiconductor chips;

applying a first dielectric layer with a thickness of less than or equal to 9.0 μm and comprising a fluorocarbon compound to the encapsulation element; and

applying a first wiring layer to the first dielectric layer.

34. The method of claim 33 , further comprising applying a second dielectric layer to the first wiring layer.

35. The method of claim 34 , further comprising applying a second wiring layer to the second dielectric layer.

36. The method of claim 34 , where the second dielectric layer comprises a fluorocarbon compound.

37. The method of claim 33 , wherein the first dielectric applied to the encapsulation element comprises a fluorocarbon compound reinforced with a glass fabric.