Temperature sensor and method for its production

1. A temperature sensor, comprising:

a substrate;

a sensor structure arranged on a first surface of the substrate, wherein the sensor structure includes a length of a meander-shaped resistive film having a first end and a second end;

an insulation layer at least partially arranged on the sensor structure and the first surface of the substrate;

a first and a second contact area arranged on the insulation layer;

a third and a fourth contact area arranged on the first surface of the substrate and in conductive connection with the first and the second end of the resistive film, respectively, and in conductive connection with the first and the second contact area on the insulation layer, respectively, wherein the first and the second contact areas have a surface dimension at least 2 times greater than a corresponding surface dimension of the third and fourth contact areas; and

wherein the length of resistive film of the sensor structure substantially completely covers the first surface of the substrate.

2. The temperature sensor of claim 1 , wherein the insulation layer includes a first and a second opening filled with conductive material, wherein the conductive material is in contact with the first end and the second end of the sensor structure and with the first contact area and the second contact area.

3. The temperature sensor of claim 1 , wherein the insulation layer has a thickness between 1 μm and 0.2 mm.

4. The temperature sensor of claim 1 , wherein the sensor structure includes a metal film having a thickness between 0.1 μm and 3 μm.

5. The temperature sensor of claim 1 , wherein the insulation layer includes a glaze, a glass ceramic, a ceramic and combinations thereof.

6. The temperature sensor of claim 1 , comprising:

a first and a second connecting wire affixed on the first and the second contact area, respectively.

7. The temperature sensor of claim 1 , wherein the third and fourth contact areas are disposed at a common edge of the substrate such that a part of the resistive film is disposed between the third and the fourth contact areas at said common edge.

8. The temperature sensor of claim 7 , wherein the at least two of the plurality of short line portions of the resistive film are disposed at one edge with a line segment extending parallel to said one edge to one of the contact areas being positioned between the at least two of the plurality of short line portions and said one edge.

9. The temperature sensor of claim 1 , wherein the third and fourth contact areas are disposed at opposite corners of the substrate.

10. A method for producing a temperature sensor, comprising:

(a) providing a substrate on the first surface of which there is arranged a sensor structure having a length of resistive film with a first end and a second end, wherein the length of resistive film of the sensor structure substantially completely covers the first surface of the substrate;

(b) forming a third and a fourth contact area on the first surface of the substrate and in connection with the first and the second ends of the sensor structure, respectively;

(c) forming an insulation layer at least partially on the sensor structure and the first surface of the substrate; and

(d) forming a first and a second contact area on the insulation layer such that they are conductively connected to the third and fourth contact areas of the sensor structure, respectively, and wherein the first and the second contact areas have a surface dimension at least 2 times greater than a corresponding surface dimension of the third and fourth contact areas.

11. The method of claim 10 , wherein, in step (b), the insulation layer is formed with a first and a second open area, corresponding to the position of the first and the second end of the sensor structure, respectively, and wherein, in step (c), the first and the second contact area are formed by applying a conductive material, wherein the application of the conductive material includes filling the first and the second open area of the insulation layer with a conductive material.

12. The method of claim 10 , wherein the insulation layer has a thickness between 1 μm and 0.2 mm.

13. The method of claim 10 , wherein the insulation layer includes a glaze, a glass ceramic, a ceramic and combinations thereof.

14. The method of claim 10 , having the following step after step (c):

(d) affixing a first and a second connecting wire to the first and the second contact area, respectively.

15. The method of claim 14 , having the following step after step (d):

(e) applying a glaze covering at least partially the portions of the connecting wires affixed to the first and second contact areas.

16. The method of claim 10 , wherein, in step (a), the third and fourth contact areas are formed at a common edge of the substrate such that a part of the resistive film is disposed between the third and the fourth contact areas at said common edge.

17. The method of claim 16 , wherein the at least two of the plurality of short line portions of the resistive film are disposed at one edge with a line segment extending parallel to said one edge to one of the contact areas being positioned between the at least two of the plurality of short line portions and said one edge.

18. The method of claim 10 , wherein, in step (a), the third and fourth contact areas are formed at opposite corners of the substrate.