Fabrication method of semiconductor device having a barrier layer containing Mn
View Patent ↗A method for fabricating a semiconductor device includes the steps of forming an opening defined by an inner wall surface in an insulation film, forming a Cu—Mn alloy layer in the opening, depositing a Cu layer on the Cu—Mn alloy layer and filling the opening with the Cu layer, and forming a barrier layer as a result of reaction between Mn atoms in the Cu—Mn alloy layer and the insulation film, wherein the step of forming the barrier layer is conducted by exposing the Cu layer to an ambient that forms a gaseous reaction product when reacted with Mn.
1. A method for fabricating a semiconductor device, comprising:
forming an opening defined by an inner wall surface in an insulation film;
forming a Cu—Mn alloy layer in said opening;
depositing a Cu layer on said Cu—Mn alloy layer and filling said opening with said Cu layer; and
forming a barrier layer as a result of reaction between Mn atoms in said Cu—Mn alloy layer and said insulation film,
wherein said forming said barrier layer is conducted by exposing said Cu layer to a gaseous ambient that reacts with Mn and forms a gaseous reaction product of Mn, said gaseous reaction product of Mn being a gaseous material,
said gaseous ambient containing any of a formic acid, a carboxylic acid, hexafluoroacetylacetonato, H 2 O, and CO 2 .
2. The method as claimed in claim 1 , wherein said ambient oxidizes Mn.
3. The method as claimed in claim 2 , wherein said ambient reacts with Mn oxide and forms the gaseous reaction product.
4. The method as claimed in claim 1 , wherein said exposing said Cu layer is conducted at a temperature of 100° C. or higher but not exceeding 400° C.
5. The method as claimed in any of claim 1 , wherein said exposing said Cu layer is conducted under a process pressure of 1-1000 Pa.
6. A method for fabricating a semiconductor device, comprising:
forming an opening defined by an inner wall surface in an insulation film;
forming a Cu—Mn alloy layer in said opening;
forming a barrier layer on said inner wall surface as a result of reaction of Mn atoms in said Cu—Mn alloy layer and said insulation film; and
depositing a Cu layer on said Cu—Mn alloy layer and filling said opening with said Cu layer,
wherein said Cu layer is exposed to a gaseous ambient that reacts with Mn and forms a gaseous reaction product of Mn, said gaseous reaction product of Mn being a gaseous material,
said gaseous ambient containing any of a formic acid, a carboxylic acid, hexafluoroacetylacetonato, H 2 O, and CO 2 .
7. The method as claimed in claim 6 , wherein said ambient oxidizes Mn.
8. The method as claimed in claim 7 , wherein said ambient reacts with Mn oxide and forms the gaseous reaction product.
9. The method as claimed in claim 6 , wherein said exposing of said Cu layer is conducted at a temperature of 100° C. or higher but not exceeding 400° C.
10. The method as claimed claim 6 , wherein said exposing of said Cu layer is conducted under a process pressure of 1-1000 Pa.
11. A method for fabricating a semiconductor device, comprising:
forming an opening defined by an inner wall surface in an insulation film;
forming a Cu—Mn alloy layer in said opening;
forming a barrier layer on said inner wall surface as a result of reaction between Mn atoms in said Cu—Mn alloy layer and said insulation film;
exposing said Cu—Mn alloy layer to a gaseous ambient that reacts with Mn and forms a gaseous reaction product of Mn, said gaseous reaction product of Mn being a gaseous material,
said gaseous ambient containing any of a formic acid, a carboxylic acid, hexafluoroacetylacetonato, H 2 O, and CO 2 ; and
depositing, after said step of exposing said Cu—Mn alloy layer to said ambient, a Cu layer on said Cu—Mn alloy layer and filing said opening with said Cu layer.
12. The method as claimed in claim 11 , wherein said forming of said barrier layer and said exposing of said Cu—Mn alloy layer to said ambient are conducted simultaneously.
13. The method as claimed in claim 11 , wherein said exposing of said Cu—Mn alloy layer to said ambient is conducted after said step of forming said barrier layer.
14. The method as claimed in claim 11 , wherein said ambient oxidizes Mn.
15. The method as claimed in claim 14 , wherein said ambient reacts with Mn oxide and forms the gaseous reaction product of Mn.
16. The method as claimed in any of claims 11 , wherein said exposing of said Cu layer is conducted at a temperature of 100° C. or higher but not exceeding 400° C.
17. The method as claimed in claim 11 , wherein said exposing of said Cu layer is conducted under a process pressure of 1-1000 Pa.