Method of manufacturing semiconductor device and semiconductor memory device

1. A method of manufacturing a semiconductor device comprising:

(A) forming a gate electrode of a transistor on a substrate, wherein a top layer of said gate electrode is a first metal film;

(B) blanket depositing an interlayer insulating film;

(C) forming a first contact hole contacting said gate electrode and a second contact hole contacting a surface of said substrate by etching said interlayer insulating film using a mask;

(D) after said (C) process, siliciding an exposed surface of said first metal film to form a first silicide at a bottom of said first contact hole;

(E) after said (D) process, blanket depositing a second metal film;

(F) after said (E) process, forming a second silicide at a bottom of said second contact hole through a silicide reaction between said second metal film and said surface of said substrate; and

(G) after said (F) process, removing said second metal film that is unreacted.

2. The method according to claim 1 ,

wherein said (D) process includes:

(D1) after said (C) process, oxidizing said surface of said substrate to form an oxide film at a bottom of said second contact hole;

(D2) after said (D1) process, blanket depositing a silicon film; and

(D3) after said (D2) process, forming said first silicide at a bottom of said first contact hole through a silicide reaction between said silicon film and said first metal film.

3. The method according to claim 2 ,

wherein said (D) process further includes:

(D4) removing said silicon film that is unreacted; and

(D5) removing said oxide film at a bottom of said second contact hole.

4. The method according to claim 1 ,

wherein said (D) process includes:

(D1) after said (C) process, blanket depositing a silicon film;

(D2) after said (D1) process, forming said first silicide at a bottom of said first contact hole through a silicide reaction between said silicon film and said first metal film; and

(D3) after said (D2) process, removing said silicon film at a surface by CMP (Chemical Mechanical Polishing).

5. The method according to claim 1 ,

wherein said first metal film is a tungsten film, and said unreacted second metal film is removed by using solution including H 2 O 2 in said (G) process.

6. A method of manufacturing a semiconductor memory device comprising:

(a) forming a select transistor of a memory cell on a substrate, wherein a top layer of a gate electrode of said select transistor is a first metal film;

(b) forming a contact plug on a diffusion layer of said select transistor;

(c) blanket depositing an interlayer insulating film;

(d) forming a first contact hole contacting said gate electrode and a second contact hole contacting said contact plug by etching said interlayer insulating film using a mask;

(e) after said (d) process, siliciding an exposed surface of said first metal film to form a first silicide at a bottom of said first contact hole;

(f) after said (e) process, blanket depositing a second metal film;

(g) after said (f) process, forming a second silicide at a bottom of said second contact hole through a silicide reaction between said second metal film and a surface of said contact plug; and

(h) after said (g) process, removing said second metal film that is unreacted.

7. The method according to claim 6 ,

wherein said (e) process includes:

(e1) after said (d) process, oxidizing said surface of said contact plug to form an oxide film at a bottom of said second contact hole;

(e2) after said (e1) process, blanket depositing a silicon film; and

(e3) after said (e2) process, forming said first silicide at a bottom of said first contact hole through a silicide reaction between said silicon film and said first metal film.

8. The method according to claim 7 ,

wherein said (e) process further includes:

(e4) removing said silicon film that is unreacted; and

(e5) removing said oxide film at a bottom of said second contact hole.

9. The method according to claim 6 ,

wherein said (e) process includes:

(e1) after said (d) process, blanket depositing a silicon film;

(e2) after said (e1) process, forming said first silicide at a bottom of said first contact hole through a silicide reaction between said silicon film and said first metal film; and

(e3) after said (e2) process, removing said silicon film at a surface by CMP (Chemical Mechanical Polishing).

10. The method according to claim 6 , further comprising:

(i) filling said second contact hole with a plug connecting between said second silicide and a capacitor of said memory cell.

11. The method according to claim 6 ,

wherein said first metal film is a tungsten film, and said unreacted second metal film is removed by using solution including H 2 O 2 in said (h) process.