Semiconductor laser diode having ridge
View Patent ↗A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
1. A semiconductor laser diode including:
a substrate,
a first semiconductor layer, an active layer, and a second semiconductor layer sequentially formed on the substrate,
a first electrode formed on an exposed top surface of the first semiconductor layer, and
a second electrode formed on a top surface of the second semiconductor layer to form a ridge waveguide semiconductor laser diode,
wherein the second semiconductor layer has a ridge and the second electrode is formed on a top surface of the ridge of the second semiconductor layer, the second electrode having a width, which is less than a width of the ridge, and
wherein the center of the width of the second electrode and the center of the width of the ridge do not coincide with each other.
2. The semiconductor laser diode of claim 1 , wherein the electrode is formed asymmetrically on one side of the ridge away from a path along which carriers move.
3. The semiconductor laser diode of claim 2 , wherein the ridge has a width greater than approximately 3 μm.
4. The semiconductor laser diode of claim 2 , wherein the width of the electrode is in the range of between approximately 50 to 80 percent of the width of the ridge.
5. The semiconductor laser diode of claim 4 , wherein a distance between an edge of one side of the ridge and an edge of one side of the electrode close to the edge of the side of the ridge extends in a direction of the ridge width, and is in the range of between 0 to approximately 10 percent of the ridge width.
6. The semiconductor laser diode of claim 1 , wherein the ridge has a width greater than approximately 3 μm.
7. The semiconductor laser diode of claim 1 , wherein the width of the electrode is in the range of between approximately 50 to 80 percent of the ridge width.
8. The semiconductor laser diode of claim 7 , wherein a distance between an edge of one side of the ridge and an edge of one side of the electrode close to the edge of the side of the ridge extends in a direction of the ridge width and is in the range of between 0 to approximately 10 percent of the ridge width.
9. The semiconductor laser diode of claim 1 , wherein the first and second semiconductor layers are n- and p-type semiconductor layers, respectively, and the electrode is a p-type electrode.
10. The semiconductor laser diode of claim 9 , wherein the first and second semiconductor layers include n- and p-type cladding layers, respectively, and the p-type cladding layer has a ridge structure.
11. The semiconductor laser diode of claim 9 , wherein the first and second semiconductor layers further include n- and p-type light guide layers, respectively.
12. The semiconductor laser diode of claim 9 , wherein the first semiconductor layer, the active layer, and the second semiconductor layer are formed of GaN-based materials.