Patent Assignment
Reel/Frame 024239/0782
Assignment of Assignor's Interest
Recorded: 2010-04-15
Pages: 5
Assignor
SAMSUNG ELECTRONICS CO., LTD.
Executed: 2010-01-26
Assignee
SAMSUNG LED CO., LTD.
314, MAETAN 3-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 443-743, KOREA, REPUBLIC OF
Covered Properties
(7)
Iii-V Group Gan-Based Compound Semiconductor Device
Nitride-Based Compound Semiconductor Light Emitting Device and Method of Fabricating the Same
Side Light Emitting Type Semiconductor Laser Diode Having Dielectric Layer Formed on Active Layer
Nitride semiconductor laser device and method of manufacturing the same
Application:
11/591,515 →
Publication:
US 2007/0098030
Substrate for Growing Pendeo Epitaxy and Method of Forming the Same
Semiconductor Laser Diode Having Ridge
GaN-BASED COMPOUND SEMICONDUCTOR DEVICE
Application:
12/610,638 →
Publication:
US 2010/0109017
Related Assignments
(6)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jun 2, 2006
From: SON, JOONG-KON; HA, KYOUNG-HO; RYU, HAN-YOUL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 017966/0361 →
Assignment of Assignor's Interest
Jun 8, 2006
From: JANG, TAE-HOON
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 017985/0519 →
Assignment of Assignor's Interest
Oct 11, 2006
From: RYU, HAN-YOUL; HA, KYOUNG-HO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018401/0826 →
Assignment of Assignor's Interest
Nov 2, 2006
From: HA, KYOUNG-HO; RYU, HAN-YOUL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018502/0299 →
Assignment of Assignor's Interest
Jan 25, 2007
From: CHAE, JUNG-HYE; SHIM, JONG-IN; HA, KYOUNG-HO; KIM, KYU-SANG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018842/0331 →
Merger
Aug 7, 2012
From: SAMSUNG LED CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028744/0272 →