Semiconductor light-emitting element, manufacturing method and mounting method of the same and light-emitting device
An LED chip of the present invention has a structure in which an n-type semiconductor layer and a p-type semiconductor layer are successively formed on the lower face of an element substrate, with the p-type semiconductor layer being formed on an area except for an area for an n-electrode. A first n-electrode is formed on the area for the n-electrode and a first p-electrode is formed on the p-type semiconductor layer. A first insulating layer having openings and is formed on the first n-electrode and the first p-electrode, and a second n-electrode and a second p-electrode having virtually the same size are formed on the first insulating layer. With this arrangement, the electrode on the n-type semiconductor layer can be made larger, thereby a mounting process of LED chips onto a circuit board can be executed by using solder at low costs.
1. A semiconductor light-emitting element comprising:
a light-transmitting element substrate;
an n-type semiconductor layer formed on the element substrate so as to cover the element substrate;
a p-type semiconductor layer formed so as to cover an area on the n-type semiconductor layer from which an area for an n-electrode on the n-type semiconductor layer is excluded, for emitting light in cooperation with the n-type semiconductor layer;
a first n-electrode that is a thin film formed on the area for the n-electrode of the n-type semiconductor layer;
a first p-electrode that is a thin film formed on the p-type semiconductor layer;
a first insulating layer that is formed so as to insulate the first n-electrode and the first p-electrode from each other;
a second n-electrode formed on the first n-electrode and the first insulating layer as a thin film having an area larger than a joined face between the n-type semiconductor and the first n-electrode so that the second n-electrode is electrically connected to the first n-electrode, the second n-electrode being insulated from the first p-electrode by the first insulating layer; and
a second p-electrode formed as a thin film having an area smaller than a joined face between the n-type semiconductor layer and the p-type semiconductor layer, the second p-electrode being electrically connected to the first p-electrode.
2. A semiconductor light-emitting element comprising:
a light-transmitting element substrate;
an n-type semiconductor layer formed on the element substrate so as to cover the element substrate;
a p-type semiconductor layer formed so as to cover an area on the n-type semiconductor layer from which an area for an n-electrode on the n-type semiconductor layer is excluded, for emitting light in cooperation with the n-type semiconductor layer;
a first n-electrode that is a thin film formed on the area for the n-electrode of the n-type semiconductor layer;
a first p-electrode that is a thin film formed on the p-type semiconductor layer;
a first insulating layer having at least one opening for the n-electrode and one opening for the p-electrode formed therein, which covers the first n-electrode and the first p-electrode so as to insulate the first n-electrode and the first p-electrode from each other, except for the opening for the n-electrode and the opening for the p-electrode,
a second n-electrode formed on the first insulating layer as a thin film having an area larger than a joined face between the n-type semiconductor layer and the first n-electrode, the second n-electrode being electrically connected to the first n-electrode through the opening for the n-electrode of the first insulating layer; and
a second p-electrode formed on the first insulating layer as a thin film having an area smaller than a joined face between the n-type semiconductor layer and the p-type semiconductor layer, the second p-electrode being electrically connected to the first p-electrode through the opening for the p-electrode of the first insulating layer.
3. The semiconductor light-emitting element according to claim 2 , further comprising:
a conductive layer that is formed on the first insulating layer on the p-type semiconductor layer so as to have an area that is smaller than the area of the joined face between the n-type semiconductor layer and the p-type semiconductor layer and is larger than the area on the second p-electrode, the conductive layer being electrically connected to the first p-electrode through the opening for the p-electrode of the first insulating layer; and
a second insulating layer that is formed between the conductive layer and the second n-electrode so as to insulate the conductive layer and the second n-electrode from each other,
wherein the second p-electrode is formed on the conductive layer as a thin film having an area that is larger than the joined face between the p-type semiconductor layer and the first p-electrode and the second p-electrode is electrically connected to the first p-electrode through the conductive layer.
4. The semiconductor light-emitting element according to claim 2 , wherein a plurality of openings for the p-electrode of the first insulating layer are formed so as to be dispersed virtually uniformly.
5. The semiconductor light-emitting element according to claim 1 , wherein the second n-electrode and the second p-electrode have virtually same size.
6. The semiconductor light-emitting element according to claim 1 , wherein the conductive bonding material layer is any one of the members selected from a group consisting of solder, silver paste and anisotropic conductive resin.
7. A light-emitting device comprising:
the semiconductor light-emitting element according to claim 1 ;
a circuit board having a plurality of electrodes; and
a conductive bonding material layer that electrically connects and fixes the second n-electrode and the second p-electrode to the electrodes on the circuit board.
8. The light-emitting element according to claim 7 , wherein the conductive bonding material layer is any one of the members selected from a group consisting of solder, silver paste and anisotropic conductive resin.
9. A method for manufacturing a semiconductor light-emitting element comprising: preparing a bare light-emitting element comprising an n-type semiconductor layer formed on a light-transmitting element substrate so as to cover the element substrate; a p-type semiconductor layer formed on an area on the n-type semiconductor layer from which an area for the n-electrode on the n-type semiconductor layer is excluded, for emitting light in cooperation with the n-type semiconductor layer; a first n-electrode that is a thin film formed on the area for the n-electrode of the n-type semiconductor layer; and a first p-electrode that is a thin film formed on the p-type semiconductor layer;
forming a first insulating layer so as to insulate the first n-electrode and the first p-electrode from each other;
forming a second n-electrode on the first n-electrode and the first insulating layer as a thin film having an area larger than a joined face between the n-type semiconductor and the first n-electrode, so that the second n-electrode is electrically connected to the first n-electrode and is insulated from the first p-electrode by the first insulating layer; and
forming a second p-electrode on the first p-electrode as a thin film having an area smaller than a joined face between the n-type semiconductor layer and the p-type semiconductor layer, so that the second p-electrode is electrically connected to the first p-electrode.
10. A method for manufacturing a semiconductor light-emitting element comprising:
preparing a bare light-emitting element comprising an n-type semiconductor layer formed on a light-transmitting element substrate so as to cover the element substrate; a p-type semiconductor layer formed on an area on the n-type semiconductor layer from which the area for the n-electrode of the n-type semiconductor layer is excluded, for emitting light in cooperation with the n-type semiconductor layer; a first n-electrode that is a thin film formed on the area for the n-electrode of the n-type semiconductor layer; and a first p-electrode that is a thin film formed on the p-type semiconductor layer;
forming a first insulating layer having at least one of each of an opening for the n-electrode and an opening for the p-electrode so as to cover the first n-electrode and the first p-electrode;
forming, on the first insulating layer, a second n-electrode that is a thin film having an area larger than a joined face between the n-type semiconductor layer and the first n-electrode, so that the second n-electrode is electrically connected to the first n-electrode through the opening for the n-electrode of the first insulating layer; and
forming, on the first insulating layer, a second p-electrode that is a thin film having an area smaller than a joined face between the n-type semiconductor layer and the p-type semiconductor layer, so that the second p-electrode is electrically connected to the first p-electrode through the opening for the p-electrode of the first insulating layer.
11. The method for manufacturing a semiconductor light-emitting element according to claim 10 , wherein the first insulating layer is formed through sputtering.
12. The method for manufacturing a semiconductor light-emitting element according to claim 9 , wherein the second n-electrode and the second p-electrode are formed through sputtering or plating.
13. A method for mounting semiconductor light-emitting elements, comprising:
placing solder between the second n-electrode as well as the second p-electrode of the semiconductor light-emitting element according to claim 1 and a plurality of electrodes on a circuit board, and then carrying out a reflow treatment thereon, thereby the semiconductor light-emitting elements are mounted on the circuit board through solder.