Granted Patent
B2
US 7,582,891 · App. 11/663,024 · Granted Sep 1, 2009
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
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Abstract
Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn 1-x Ge x buffer layer and their uses are provided.
Claims (5)
1. A semiconductor structure comprising: a single quantum well Ge 1-x1-y Si x1 Sn y /Ge 1-x2 Si x2 heterostructure grown strain-free on Si(100) via a Sn 1-x Ge x buffer layer.
2. The semiconductor structure of claim 1 wherein the heterostructure is deposited via chemical vapor deposition.
3. The semiconductor structure of claim 1 , wherein x2 is between 0.02 and 0.2.
4. The semiconductor of claim 1 , wherein 0.4<x1<0.6.
5. The semiconductor structure of claim 1 , wherein x1 is between 0.4 and 0.6 and x2 is between 0.5 and 0.25.
Assignments (1)
CONFIRMATORY LICENSE
Recorded Oct 4, 2019
From: ARIZONA STATE UNIVERSITY - TEMPE CAMPUS
To: NATIONAL SCIENCE FOUNDATION; AIR FORCE RESEARCH LABORATORY
Reel/Frame 050631/0583 →
Continuity (2)
Provisional Application
6061103600
· Sep 16, 2004