Stacked layer electrode for organic electronic devices
View Patent ↗An electrode for an electro-optic device has a wetting layer of electrically conductive material formed on a substrate. A second layer of electrically conductive material is formed on the wetting layer of electrically conductive material. The wetting layer has a first wetting ability with respect to a surface of the substrate and the second layer has a second wetting ability with respect to the surface of said substrate. The first wetting ability is different from the second wetting ability and the wetting layer acts to alter an optical property of the electrode due to the wetting ability of the wetting layer on the surface of the substrate.
1. An electrode for an electro-optic device, comprising:
a wetting layer of electrically conductive material formed on a substrate; and
a second layer of electrically conductive material formed on said wetting layer of electrically conductive material,
wherein said wetting layer has a first wetting ability with respect to a surface of said substrate and said second layer has a second wetting ability with respect to said surface of said substrate, said first wetting ability being different from said second wetting ability, and
wherein said wetting layer acts to alter an optical property of said electrode due to its wetting ability on said surface of said substrate.
2. An electrode for an electro-optic device according to claim 1 , wherein said first wetting ability of said wetting layer is greater than said second wetting ability of said second layer.
3. An electrode for an electro-optic device according to claim 2 , wherein said wetting layer acts to increase an optical transmittance of said electrode.
4. An electrode for an electro-optic device according to claim 3 , further comprising a third layer of electrically conductive material formed on said second layer of electrically conductive material.
5. An electrode for an electro-optic device according to claim 4 , wherein said wetting layer has a thickness in a range from about 0.2 nm to 0.5 nm.
6. An electrode for an electro-optic device according to claim 5 , wherein said wetting layer has a thickness of about 0.25 nm.
7. An electrode for an electro-optic device according to claim 5 , wherein said second layer of electrically conductive material has a thickness in a range from about 2.0 nm to 4.0 nm.
8. An electrode for an electro-optic device according to claim 7 , wherein said third layer of electrically conductive material has a thickness in a range from about 9.0 nm to 11.0 nm.
9. An electrode for an electro-optic device according to claim 8 , wherein said wetting layer consists essentially of Au, said second layer consists essentially of Al and said third layer consists essentially of Au.
10. An electrode for an electro-optic device according to claim 7 , wherein said third layer of electrically conductive material has a thickness in a range from about 8.0 nm to 11.0 nm.
11. An electrode for an electro-optic device according to claim 10 , wherein said wetting layer consists essentially of Cu, said second layer consists essentially of Al, and said third layer consists essentially of Cu.
12. An electrode for an electro-optic device according to claim 4 , wherein said wetting layer consists essentially of a metal and has a thickness less than a corresponding skin depth, said second layer consists essentially of a metal and has a thickness less than a corresponding skin depth, and said third layer consists essentially of a metal and has a thickness less than a corresponding skin depth.
13. An electrode for an electro-optic device according to claim 4 , wherein said wetting layer, said second layer, and said third layer of electrically conductive material are each formed by a deposition process.
14. An electrode for an electro-optic device according to claim 2 , wherein said wetting layer acts to increase an optical absorption of said electrode.
15. An electrode for an electro-optic device according to claim 14 , wherein said wetting layer of electrically conductive material comprises nano-clusters comprising said electrically conductive material of said wetting layer.
16. An electrode for an electro-optic device according to claim 15 , wherein said second layer of electrically conductive material consists essentially of Ag.
17. An electrode for an electro-optic device according to claim 14 , wherein said wetting layer of electrically conductive material comprise Al.
18. An electrode for an electro-optic device according to claim 1 , wherein said first wetting ability of said wetting layer is less than said second wetting ability of said second layer.
19. An electro-optic device, comprising:
a substrate; and
a stacked layer electrode formed on said substrate,
wherein said stacked layer substrate comprises:
a wetting layer of electrically conductive material formed on a substrate; and
a second layer of electrically conductive material formed on said wetting layer of electrically conductive material,
wherein said wetting layer has a first wetting ability with respect to a surface of said substrate and said second layer has a second wetting ability with respect to said surface of said substrate, said first wetting ability being different from said second wetting ability, and
wherein said wetting layer acts to alter an optical property of said electrode due to the wetting ability of said wetting layer on said surface of said substrate.
20. An electro-optic device according to claim 19 , wherein said first wetting ability of said wetting layer is greater than said second wetting ability of said second layer.
21. An electro-optic device according to claim 20 , wherein said wetting layer acts to increase an optical transmittance of said electrode.
22. An electro-optic device according to claim 21 , further comprising a third layer of electrically conductive material formed on said second layer of electrically conductive material.
23. An electro-optic device according to claim 22 , wherein said wetting layer has a thickness in a range from about 0.2 nm to 0.5 nm.
24. An electro-optic device according to claim 23 , wherein said wetting layer has a thickness of about 0.25 nm.
25. An electro-optic device according to claim 23 , wherein said second layer of electrically conductive material has a thickness in a range from about 2.0 nm to 4.0 nm.
26. An electro-optic device according to claim 25 , wherein said third layer of electrically conductive material has a thickness in a range from about 9.0 nm to 11.0 nm.
27. An electro-optic device according to claim 26 , wherein said wetting layer consists essentially of Au, said second layer consists essentially of Al and said third layer consists essentially of Au.
28. An electro-optic device according to claim 25 , wherein said third layer of electrically conductive material has a thickness in a range from about 8.0 nm to 11.0 nm.
29. An electro-optic device according to claim 28 , wherein said wetting layer consists essentially of Cu, said second layer consists essentially of Al, and said third layer consists essentially of Cu.
30. An electro-optic device according to claim 22 , wherein said wetting layer consists essentially of a metal and has a thickness less than a corresponding skin depth, said second layer consists essentially of a metal and has a thickness less than a corresponding skin depth, and said third layer consists essentially of a metal and has a thickness less than a corresponding skin depth.
31. An electro-optic device according to claim 22 , wherein said wetting layer, said second layer, and said third layer of electrically conductive material are each formed by a deposition process.
32. An electro-optic device according to claim 20 , wherein said wetting layer acts to increase an optical absorption of said electrode.
33. An electro-optic device according to claim 32 , wherein said wetting layer of electrically conductive material comprises nano-clusters comprising said electrically conductive material of said wetting layer.
34. An electro-optic device according to claim 32 , wherein said wetting layer of electrically conductive material comprise Al.
35. An electro-optic device according to claim 34 , wherein said second layer of electrically conductive material consists essentially of Ag.
36. An electro-optic device according to claim 19 , wherein said first wetting ability of said wetting layer is less than said second wetting ability of said second layer.
37. An electro-optic device according to claim 19 , wherein said substrate comprises an ITO/glass layer, an organic layer formed on said ITO/glass layer, and an M(acac) 2 layer formed on said organic layer, said electro-optic device being a polymeric light emitting diode.
38. An electro-optic device according to claim 19 , wherein said substrate comprises a plastic substrate, a transparent electrode formed on said plastic substrate, and a plurality of tandem photovoltaic cells formed on said transparent electrode; said electro-optic device being a tandem stacked multiple polymer solar cell.
39. An electro-optic device according to claim 19 , wherein said substrate comprises a glass substrate and polymer photo-voltaic cell formed on said glass substrate, said electro-optic device being a solar cell adapted to be electrically connected to another solar cell at least in one of a series or a parallel circuit to provide a vertical stacking of solar cells.