Localized alloying for improved bond reliability
View Patent ↗In some embodiments a method of forming a gold-aluminum electrical interconnect is described. The method may include interposing a diffusion retardant layer between the gold and the aluminum ( 1002 ), the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material; bringing into contact the diffusion retardant layer, the gold, and the aluminum ( 1004 ); forming alloys of gold and the diffusion retardant material in regions containing the material ( 1006 ) and forming gold-aluminum intermetallic compounds in regions substantially devoid of the material ( 1008 ); and forming a continuous electrically conducting path between the aluminum and the gold ( 1010 ). In some embodiments, a structure useful in a gold-aluminum interconnect is provided. The structure may include an aluminum alloy bond pad ( 530 ) and a diffusion retardant layer ( 520 ) in contact with the bond pad, the diffusion retardant layer including regions ( 522 ) containing and regions ( 524 ) substantially devoid of a diffusion retardant material. The structure may include a gold free air ball ( 714 ) in contact with the diffusion retardant layer.
1. A method of forming a gold-aluminum electrical interconnect, the method comprising:
forming on one of gold and aluminum a diffusion retardant layer, the diffusion retardant layer comprising regions containing a diffusion retardant material and defining regions substantially devoid of the diffusion retardant material;
bringing into contact the gold, the diffusion retardant layer, and the aluminum;
forming at least one alloy of gold and the diffusion retardant material in regions containing the diffusion retardant material;
forming at least one gold-aluminum intermetallic compound in regions substantially devoid of the diffusion retardant material; and
forming a continuous electrically conducting path between the aluminum and the gold.
2. The method of claim 1 , wherein:
the gold has an interdiffusion rate into the diffusion retardant material less than an interdiffusion rate of the gold into the aluminum.
3. The method of claim 1 , wherein:
forming the diffusion retardant layer comprises depositing the diffusion retardant material in situ on an aluminum alloy bond pad.
4. The method of claim 3 , wherein:
depositing the diffusion retardant material comprises depositing the diffusion retardant material by physical vapor deposition.
5. The method of claim 1 , wherein:
forming the diffusion retardant layer comprises forming in situ a layer of the diffusion retardant material alloyed with aluminum on an aluminum alloy bond pad; and
allowing the diffusion retardant material to segregate into regions containing the diffusion retardant material and regions substantially devoid of the diffusion retardant material.
6. The method of claim 1 , wherein:
forming the diffusion retardant layer comprises depositing the diffusion retardant material in situ on a gold free air ball.
7. The method of claim 1 , wherein:
forming the diffusion retardant layer comprises co-sputtering the diffusion retardant material and aluminum onto an aluminum alloy bond pad.
8. The method of claim 1 , wherein:
the diffusion retardant material comprises one or more of copper, molybdenum, rhodium, palladium, silver, rhenium, iridium, and platinum.
9. The method of claim 8 , wherein:
the diffusion retardant material comprises palladium; and
forming the diffusion retardant layer comprises forming the diffusion retardant layer one of an aluminum alloy bond pad and a gold free air ball.
10. A gold-aluminum electrical interconnect structure made by a method of forming a gold-aluminum electrical interconnect, the method comprising: forming on one of gold and aluminum a diffusion retardant layer, the diffusion retardant layer comprising regions containing a diffusion retardant material and defining regions substantially devoid of the diffusion retardant material; bringing into contact the gold, the diffusion retardant layer, and the aluminum; forming at least one alloy of gold and the diffusion retardant material in regions containing the diffusion retardant material; forming at least one gold-aluminum intermetallic compound in regions substantially devoid of the diffusion retardant material; and forming a continuous electrically conducting path between the aluminum and the gold comprising:
an interfacial region is comprised of at least one phase of gold-aluminum intermetallic compounds in regions substantially devoid of the diffusion retardant material, and at least one phase of gold alloyed with the diffusion retardant material in regions containing the diffusion retardant material.