IP Library Granted Patent US 7,683,483
Granted Patent B2
US 7,683,483 · App. 11/671,048 · Granted Mar 23, 2010

Electronic device with connection bumps

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Quick Facts
Patent No.
US 7,683,483
App. No.
11/671,048
Granted
Mar 23, 2010
Kind
B2
Abstract

Flip-chip electronic devices ( 40, 70, 80, 90 ) employ bumps ( 42, 72, 82 ) for coupling to an external substrate. Device cells ( 43, 73, 83, 93 ) and bumps ( 42, 72, 82 ) are preferably arranged in clusters ( 46 ) where four bumps ( 42, 72, 82 ) substantially surround each device cell ( 43, 73, 83, 93 ) or form a cross with the device cell ( 43, 73, 83, 93 ) at the intersection of the cross. The bumps ( 42, 72, 82 ) are desirably spaced apart by the minimum allowable bump ( 42, 72, 82 ) pitch (L m ). Typically, each device cell ( 43, 73, 83, 93 ) contains one or more active device regions ( 44, 74, 86, 96 ) depending on the overall function. Complex devices ( 40, 70 ) are formed by an X-Y array of the clusters ( 46 ), where adjacent clusters ( 46 ) may share bumps ( 43, 73, 83, 93 ) and/or device cells ( 43, 73, 83, 93 ). In a preferred embodiment, the bumps ( 42, 82 ) form the outer perimeter ( 48 ) of the device ( 40, 80, 90 ). The maximum device temperature and overall noise is reduced.

Claims (46)

1. A flip-chip electronic device, comprising:

a first cluster comprising

a first device cell having one or more active elements, and

multiple first cluster bumps directly adjacent to and in close thermal proximity to the first device cell and adapted to thermally couple the first device cell to an external substrate,

wherein the multiple first cluster bumps include at least a first bump, a second bump, a third bump, and a fourth bump, and wherein the first device cell is centered between and equidistant from the first bump, the second bump, the third bump, and the fourth bump, wherein the first bump is directly adjacent a first side of the first device cell, the second bump is directly adjacent a second side of the first device cell, the third bump is directly adjacent a third side of the first device cell, and the fourth bump is directly adjacent a fourth side of the first device cell; and

a second cluster comprising

a second device cell having one or more active elements, and

multiple second cluster bumps directly adjacent to and in close thermal proximity to the second device cell and adapted to thermally couple the second device cell to the external substrate, wherein the multiple second cluster bumps include at least the fourth bump, a fifth bump, a sixth bump, and a seventh bump, wherein the fourth bump is directly adjacent a first side of the second device cell, the fifth bump is directly adjacent a second side of the second device cell, the sixth bump is directly adjacent a third side of the second device cell, and the seventh bump is directly adjacent a fourth side of the second device cell.

2. The device of claim 1 , wherein the bumps are spaced apart at least by a minimum allowed bump pitch.

3. The device of claim 1 , wherein an outer perimeter of the device includes bumps spaced-apart by a minimum allowed bump pitch.

4. The device of claim 1 , wherein for the first cluster, device fingers of the first device cell are aligned along a first axis, and wherein two of the multiple first cluster bumps are aligned on either side of the first device cell along the first axis, and wherein another two of the multiple first cluster bumps are aligned on either side of the first device cell along a second axis, which is perpendicular to the first axis.

5. The device of claim 1 , wherein the first bump, the second bump, the third bump, and the fourth bump are positioned along arms of a cross, wherein the first device cell is positioned at an intersection of the arms of the cross, and wherein a principal direction of the first device cell is aligned with one of the arms of the cross.

6. The device of claim 1 , wherein the clusters are substantially square.

7. The flip-chip electronic device of claim 1 , further comprising:

a third cluster comprising

a third device cell having one or more active elements, and

multiple third cluster bumps directly adjacent to and in close thermal proximity to the third device cell and adapted to thermally couple the third device cell to the external substrate,

wherein the at least one bump of the multiple first cluster bumps is included in the multiple third cluster bumps, and

wherein the first device cell, the second device cell, and the at least one bump of the multiple first cluster bumps are aligned along a first axis, and

wherein the third device cell and the at least one bump of the multiple first cluster bumps are aligned along a second axis that is perpendicular to the first axis.

8. The flip-chip electronic device of claim 1 , wherein the multiple first cluster bumps include only the first bump, the second bump, the third bump, and the fourth bump, and wherein the multiple second cluster bumps include only the fourth bump, the fifth bump, the sixth bump, and the seventh bump.

9. The flip-chip electronic device of claim 1 , wherein the first bump is centered along the first side of the first device cell, the second bump is centered along the second side of the first device cell, the third bump is centered along the third side of the first device cell, and the fourth bump is centered along the fourth side of the first device cell.

10. An electronic device, comprising:

a plurality of clusters arranged in an array, wherein each cluster of the array includes a device cell; and

multiple bumps disposed around the device cell so that four bumps surround the device cell, wherein the four bumps are positioned directly adjacent to four sides of the device cell so that the device cell is centered between and equidistant from the four bumps, and wherein the four bumps are in substantially equal thermal communication with the first device cell, and

wherein at least one bump of a first cluster of the plurality of clusters is included in the multiple bumps of a second cluster of the plurality of clusters that is adjacent to the first cluster, and wherein the at least one bump of the first cluster is directly adjacent to a side of a device cell of the second cluster.

11. The device of claim 10 , wherein the four bumps are arranged so that lines drawn between pairs of bumps form arms of a cross and the device cell is located at the intersection of the arms of the cross.

12. The device of claim 10 , wherein the device cell comprises multiple active elements.

13. The device of claim 10 , wherein the four bumps are arranged so that lines drawn between pairs of bumps form arms of a cross and the device cell is located at the intersection of the arms of the cross, and wherein

the device cell comprises at least two active elements and at least two ballast resistors, wherein long dimensions of the at least two active elements and the at least two ballast resistors are aligned parallel to a first arm of the cross.

14. The device of claim 13 , wherein the at least two ballast resistors are located between the at least two active elements.

15. The flip-chip electronic device of claim 10 , wherein the multiple bumps include only the four bumps.

16. The flip-chip electronic device of claim 10 , wherein each of the four bumps is centered along a different side of the device cell.

17. An electronic device, comprising:

multiple first device cells, wherein a center of each device cell of the multiple first device cells is aligned along a first axis;

multiple first-axis aligned bumps disposed directly adjacent to and in thermal proximity to the multiple first device cells and aligned substantially along the first axis, wherein a first device cell of the multiple first device cells and the first-axis aligned bumps that are directly adjacent to the first device cell form a first cluster, and wherein a first-axis aligned bump is disposed between each pair of adjacent first device cells and the first-axis aligned bump is directly adjacent to sides of both of the adjacent first device cells; and

multiple second device cells, wherein a center of each device cell of the multiple second device cells is aligned along a second axis that is parallel with and offset from the first axis; and

multiple second-axis aligned bumps disposed directly adjacent to and in thermal proximity to the multiple second device cells and aligned substantially along the second axis, wherein a second device cell of the multiple second device cells and the second-axis aligned bumps that are directly adjacent to the second device cell form a second cluster, and wherein a second-axis aligned bump is disposed between each pair of adjacent second device cells and the second-axis aligned bump is directly adjacent to sides of both of the adjacent second device cells, and wherein a first-axis aligned bump of the first cluster is disposed directly adjacent to the second device cell of the second cluster, and a second-axis aligned bump of the second cluster is disposed directly adjacent to the first device cell of the first cluster.

18. The device of claim 17 , wherein the bumps of each cluster are separated by at least the minimum allowed bump spacing.

19. The device of claim 17 , wherein the clusters are arranged so that bumps form an exterior perimeter of the device.

20. The device of claim 17 , wherein the clusters are arranged so that the bumps form an exterior boundary of the device on at least two sides of the device.

21. The device of claim 17 , wherein the bumps of adjacent clusters are substantially equally spaced.

22. The device of claim 17 , wherein the first cluster and the second cluster are staggered with respect to each other by approximately one-third of a cluster length.

23. The device of claim 22 , wherein a perimeter of the device is formed by bumps on at least two sides of the device.

24. The device of claim 17 , wherein at least some of the multiple first and second device cells each comprise two active regions and two ballast resistors, wherein the two active regions are located closer to the bumps of the cluster than the ballast resistors.

25. The flip-chip electronic device of claim 17 , wherein a first-axis aligned bump of the first-axis aligned bumps and a center of a second device cell of the multiple second device cells are aligned along a third axis that is perpendicular to the first axis and the second axis.

Assignments (39)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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323.01(C) ASSIGNMENT OR CHANGE OF NAME IMPROPERLY FILED AND RECORDED BY ANOTHER PERSON AGAINST OWNER'S PATENT Recorded Oct 3, 2019
From: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2017
From: NORTH STAR INNOVATIONS INC.
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
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RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Aug 17, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Dec 21, 2015
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PATENT RELEASE Recorded Dec 21, 2015
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PATENT RELEASE Recorded Dec 21, 2015
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PATENT RELEASE Recorded Dec 21, 2015
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PATENT RELEASE Recorded Dec 21, 2015
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To: FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Sep 3, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Sep 3, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Sep 1, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Sep 1, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Mar 15, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
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SECURITY AGREEMENT Recorded Sep 19, 2007
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To: CITIBANK, N.A.
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2007
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