Apparatus for hardening a static random access memory cell from single event upsets
View Patent ↗A single event upset (SEU) hardened memory cell to be utilized in static random access memories is disclosed. The SEU hardened memory cell includes a first inverter and a second inverter connected to each other in a cross-coupled manner. The SEU hardened memory cell also includes a first resistor, a second resistor and a capacitor. The first resistor is connected between an input of the first inverter and an output of the second inverter. The second resistor is connected between an input of the second inverter and an output of the first inverter. The capacitor is connected between an input of the first inverter and an input of the second inverter.
1. A single event upset hardened memory cell comprising:
a first inverter and a second inverter connected to each other in a cross-coupled manner;
a first resistor connected between an input of said first inverter and an output of said second inverter;
a second resistor connected between an input of said second inverter and an output of said first inverter; and
a capacitor connected between an input of said first inverter and an input of said second inverter.
2. The memory cell of claim 1 , wherein said first inverter includes an n-channel transistor and a p-channel transistor.
3. The memory cell of claim 1 , wherein said second inverter includes an n-channel transistor and a p-channel transistor.
4. The memory cell of claim 1 , wherein said capacitor is a metal-insulator-metal capacitor.
5. The memory cell of claim 4 , wherein said metal-insulator-metal capacitor is located above said first and second inverters.
6. The memory cell of claim 1 , wherein said capacitor is a poly-poly capacitor.
7. The memory cell of claim 1 , wherein said capacitor is a trench capacitor.
8. A memory device, comprising:
a sense amplifier;
an addressing circuitry having a row decoder and a column decoder;
an array of wordlines and complementary bit line pairs, coupled to said sense amplifier and said addressing circuitry;
a plurality of memory cells located at an intersection of each of said wordlines and said bitline pairs, wherein each of said plurality of memory cells has a single event upset hardened bi-stable circuit that includes:
a first inverter and a second inverter connected to each other in a cross-coupled manner;
a first resistor connected between an input of said first inverter and an output of said second inverter;
a second resistor connected between an input of said second inverter and an output of said first inverter; and
a capacitor connected between an input of said first inverter and an input of said second inverter.
9. The memory device of claim 8 , wherein said first inverter includes an n-channel transistor and a p-channel transistor.
10. The memory device of claim 8 , wherein said second inverter includes an n-channel transistor and a p-channel transistor.
11. The memory device of claim 8 , wherein said capacitor is a metal-insulator-metal capacitor.
12. The memory device of claim 11 , wherein said metal-insulator-metal capacitor is located above said first and second inverters.
13. The memory device of claim 8 , wherein said capacitor is a poly-poly capacitor.
14. The memory device of claim 8 , wherein said capacitor is a trench capacitor.
15. An apparatus, comprising:
an electronic system; and
a memory device having a plurality of memory cells, wherein each of said plurality of memory cells has a single event upset hardened bi-stable circuit that includes:
a first inverter and a second inverter connected to each other in a cross-coupled manner;
a first resistor connected between an input of said first inverter and an output of said second inverter;
a second resistor connected between an input of said second inverter and an output of said first inverter; and
a capacitor connected between an input of said first inverter and an input of said second inverter.
16. The apparatus of claim 15 , wherein said first inverter includes an n-channel transistor and a p-channel transistor, and said second inverter includes an n-channel transistor and a p-channel transistor.
17. The apparatus of claim 15 , wherein said capacitor is a metal-insulator-metal capacitor.
18. The apparatus of claim 17 , wherein said metal-insulator-metal capacitor is located above said first and second inverters.
19. The apparatus of claim 15 , wherein said capacitor is a poly-poly capacitor.
20. The apparatus of claim 15 , wherein said capacitor is a trench capacitor.