IP Library Granted Patent US 7,598,618
Granted Patent B2
US 7,598,618 · App. 11/678,619 · Granted Oct 6, 2009

Semiconductor device

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Quick Facts
Patent No.
US 7,598,618
App. No.
11/678,619
Granted
Oct 6, 2009
Kind
B2
Abstract

A semiconductor device that enables the transmission time of a signal and implementation area to be reduced, and a method for manufacturing the same. A semiconductor device includes a first semiconductor substrate, a capacitor chip, an external input terminal, and an external output terminal. The first semiconductor chip includes a first surface, a second surface, an eleventh through-hole electrode, a twelfth through-hole electrode, and a thirteenth through-hole electrode. The capacitor is laminated on the first semiconductor chip and includes a third surface. A capacitor element is formed on the third surface. The capacitor element functions as a condenser component in the periphery of the first semiconductor chip. The external input terminal is electrically coupled to the capacitor element and the twelfth through-hole electrode through the eleventh through-hole electrode. The external output terminal is coupled to the circuit element through the thirteenth through-hole electrode.

Claims (9)

1. A semiconductor device, comprising:

a first semiconductor chip having first and second surfaces and having a first circuit element therein, the first semiconductor chip comprising a first through-hole electrode, a second through-hole electrode, and a third through-hole electrode, the second surface disposed on a side opposite the first surface, the first through-hole electrode penetrating through the first semiconductor chip from the first surface to the second surface and electrically isolated from the first circuit element, the second and third through-hole electrodes penetrating through the first semiconductor chip from the first surface to the second surface and electrically coupled to the first circuit element;

a capacitor chip laminated on the first semiconductor chip, the capacitor chip comprising a third surface, the third surface having a capacitor element thereon, the capacitor element is a peripheral condenser component of the first semiconductor chip;

an external input terminal disposed on a side of the capacitor chip opposite the third surface and across from the first semiconductor chip, the external input terminal configured such that a signal is input thereto; and

an external output terminal disposed on the opposite side of the capacitor chip across from the first semiconductor chip, the external output terminal configured such that a signal is externally output therefrom, either the external input terminal or the external output terminal electrically coupled to the capacitor element and the second through-hole electrode through the first through-hole electrode, an other of the external input terminal and the external output terminal coupled to the first circuit element through the third through-hole electrode.

2. The semiconductor device according to claim 1 , wherein the capacitor element comprises a first conductive layer disposed approximately on an entirety of the third surface, a capacitor insulation layer disposed above the first conductive layer, and a second conductive layer disposed above the capacitor insulation layer, the first conductive layer coupled to the ground level, and the second conductive layer coupled to either the external input terminal or the external output terminal through the first through-hole electrode and coupled to the first circuit element through the second through-hole electrode.

3. The semiconductor device according to claim 1 , further comprising a second semiconductor chip, the second semiconductor chip having a second circuit element therein, the second semiconductor chip comprising a fourth surface, a fifth surface, a fourth through-hole electrode, a fifth through-hole electrode, and a sixth through-hole electrode, the fifth surface located on a side opposite the fourth surface, the fourth through-hole electrode penetrating through the second semiconductor chip from the fourth surface to the fifth surface and electrically isolated from the second circuit element, the fifth and sixth through-hole electrodes penetrating through the second semiconductor chip from the fourth surface to the fifth surface and electrically coupled to the second circuit element; and

wherein either the external input terminal or the external output terminal is coupled to the fifth through-hole electrode through the fourth through-hole electrode, the first through-hole electrode, and the second through-hole electrode, and

an other of the external input terminal and the external output terminal is coupled to the second circuit element through the sixth through-hole electrode.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 19, 2022
From: ACHLYS TECHNOLOGIES INC.
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 060244/0398 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 11, 2022
From: LAPIS SEMICONDUCTOR CO., LTD.
To: ACHLYS TECHNOLOGIES INC.
Reel/Frame 059559/0280 →
CHANGE OF NAME Recorded Mar 21, 2014
From: OKI SEMICONDUCTOR CO., LTD
To: LAPIS SEMICONDUCTOR CO., LTD.
Reel/Frame 032495/0483 →
CHANGE OF NAME Recorded Jan 16, 2009
From: OKI ELECTRIC INDUSTRY CO., LTD.
To: OKI SEMICONDUCTOR CO., LTD.
Reel/Frame 022162/0586 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2007
From: SHIRAISHI, YASUSHI
To: OKI ELECTRIC INDUSTRY CO., LTD.
Reel/Frame 018938/0758 →