Adaptive threshold wafer testing device and method thereof
View Patent ↗Techniques for testing a semiconductor wafer are disclosed. One technique includes measuring a parameter for each of the semiconductor dies in a region of the wafer and determining an adaptive threshold for the region based on the measured parameters. The parameter measured for each die in the region is then compared to the adaptive threshold to determine a qualification status for each die. Accordingly, the semiconductor dies of the wafer are qualified based on an adaptive threshold that varies according to the wafer region under test. This allows for detection of dies whose parameters vary significantly from other dies in a region, providing for detection of potentially faulty dies whose parameter measurements otherwise meet a fixed threshold set for the entire wafer, such as a Single Threshold Test Limit (STL) expectation for the wafer.
1. A method, comprising:
accessing at a computer processor first test data comprising a first plurality of parameter measurement values, each of the first plurality of parameter measurement values associated with a corresponding one of a first subset of semiconductor dies of a wafer comprising a first region and a second region, the first subset associated with the first region, wherein the first plurality of parameter measurements comprise parameter measurements of a first type, the first type selected from the group consisting of: quiescent current supply measurements, clock speed measurements, port input leakage measurements, and transistor threshold voltage measurements;
determining at the computer processor a first parameter threshold for the first subset of semiconductor dies based on the first plurality of parameter measurement values and not based on a second plurality of parameter measurement values associated with the second region, the first parameter threshold comprising a first adaptive threshold associated with the first subset of semiconductor dies;
determining at the computer processor a first qualification status of a first die of the first subset based on a relationship between the first parameter threshold and one of the first plurality of parameter measurement values corresponding to the first die; and
storing at the computer processor a value representative of the first qualification status of the first die.
2. The method of claim 1 , further comprising:
accessing at the computer processor second test data comprising the second plurality of parameter measurement values, each of the second plurality of parameter measurement values associated with a corresponding one of a second subset of semiconductor dies of the wafer;
determining at the computer processor a second parameter threshold for the second subset of semiconductor dies based on the second plurality of parameter measurement values;
determining at the computer processor a second qualification status of a second die of the second subset based on a relationship between the second parameter threshold and one of the second plurality of parameter measurement values corresponding to the first die; and
storing the first qualification status of the second die.
3. The method of claim 2 , wherein determining the first parameter threshold comprises determining the first parameter threshold based on a first calculation process and determining the second parameter threshold comprises determining the first parameter threshold based on the first calculation process.
4. The method of claim 2 , determining the first parameter threshold comprises determining the first parameter threshold with a based on a first calculation process and determining the second parameter threshold comprises determining the first parameter threshold based on a second calculation process, the second calculation process different from the first.
5. The method of claim 2 , wherein the first region includes dies located in disparate areas of the wafer.
6. The method of claim 1 , wherein determining the first parameter threshold comprises determining an average of the first plurality of parameter measurements.
7. The method of claim 6 , wherein determining the first parameter threshold further comprises adjusting the average by an offset.
8. The method of claim 7 , wherein the offset is three standard deviations of the first plurality of parameter measurements.
9. The method of claim 1 , further comprising:
accessing at the computer device second test data comprising a second plurality of parameter measurement values, each of the second plurality of parameter measurements associated with a corresponding one of the first subset of semiconductor dies;
determining at the computer device a second parameter threshold for the first subset of semiconductor dies based on the second plurality of parameter measurement values;
determining at the computer device a second qualification status of the first die based on a relationship between the second parameter threshold and one of the second plurality of parameter measurement values corresponding to the first die; and
storing at the computer device a value representative of the second qualification status of the first die.
10. The method of claim 9 , wherein the first plurality of parameter measurements is associated with a first parameter type the second plurality of parameter measurements are associated with a second parameter type.
11. The method of claim 9 , wherein the first plurality of parameter measurements is associated with a first configuration of the first die, and the second plurality of parameter measurements are associated with a second configuration of the second die.
12. The method of claim 9 , wherein determining a first qualification status of the first die further comprises determining the first qualification status based on a relationship between a predetermined specified threshold associated with the wafer and the one of the first plurality of parameter measurement values corresponding to the first die.
13. A device comprising computer readable media, the computer readable media comprising instructions to manipulate a processor to execute the instruction, the instructions comprising:
instructions to access first test data comprising a first plurality of parameter measurement values, each of the first plurality of parameter measurement values associated with a corresponding one of a first subset of semiconductor dies of a wafer comprising a first region and a second region, the first subset associated with the first region, wherein the first plurality of parameter measurements comprise parameter measurements of a first type, the first type selected from the group consisting of: quiescent current supply measurements, clock speed measurements, port input leakage measurements, and transistor threshold voltage measurements;
instructions to determine a first parameter threshold for the first subset of semiconductor dies based on the first plurality of parameter measurement values and not based on a second plurality of parameter values associated the second region;
instructions to determine a first qualification status of a first die of the first subset based on a relationship between the first parameter threshold and one of the first plurality of parameter measurement values corresponding to the first die; and
instructions to store the first qualification status of the first die.
14. The device of claim 13 , wherein the instructions further comprise:
instructions to access second test data comprising the second plurality of parameter measurement values, each of the second plurality of parameter measurements associated with a corresponding one of a second subset of semiconductor dies of the wafer;
instructions to access a second parameter threshold for the second subset of semiconductor dies based on the second plurality of parameter measurement values;
instructions to determine a second qualification status of a second die of the second subset based on a relationship between the second parameter threshold and one of the second plurality of parameter measurements corresponding to the first die; and
instructions to store the first qualification status of the second die.
15. The device of claim 14 , wherein the first region includes dies located in disparate areas of the wafer.
16. The device of claim 13 , wherein the instructions to determine the first parameter threshold comprise instructions to determine the first parameter threshold based on a first calculation process and determining the second parameter threshold comprises determining the first parameter threshold based on the first calculation process.
17. The device of claim 13 , wherein the instructions to determine the first parameter threshold comprise instructions to determine the first parameter threshold based on a first calculation process and determining the second parameter threshold comprises determining the first parameter threshold based on a second calculation process, the second calculation process different from the first.
18. The device of claim 13 , wherein the instructions further comprise:
instructions to access second test data comprising a second plurality of parameter measurement values, each of the second plurality of parameter measurement values associated with a corresponding one of the first subset of semiconductor dies;
instructions to determine a second parameter threshold for the first subset of semiconductor dies based on the second plurality of parameter measurement values;
instructions to determine a second qualification status of the first die based on a relationship between the second parameter threshold and one of the second plurality of parameter measurement values corresponding to the first die; and
instructions to store a value representing the second qualification status of the first die.
19. A device, comprising:
a first interface module configured to receive first test data comprising a first plurality of parameter measurement values, each of the first plurality of parameter measurement values associated with a corresponding one of a first subset of semiconductor dies of a wafer, wherein the first plurality of parameter measurements comprise parameter measurements of a first type, the first type selected from the group consisting of: quiescent current supply measurements, clock speed measurements, port input leakage measurements, and transistor threshold voltage measurements;
an adaptive threshold configuration module configured to determine a first parameter threshold for the first subset of semiconductor dies;
a qualification module configured to determine a first qualification status of a first die of the first subset based on a relationship between the first parameter threshold and one of the first plurality of parameter measurement values corresponding to the first die; and
a memory configured to store a value representative of the first qualification status.