Bimorph element, bimorph switch, mirror element, and method for manufacturing these
View Patent ↗There is provided a bimorph element including a silicon oxide layer, a high expansion coefficient layer that is formed on the silicon oxide layer and has a thermal expansion coefficient higher than a thermal expansion coefficient of the silicon oxide layer, and a deformation preventing film that covers a surface of the silicon oxide layer and prevents the silicon oxide layer from being deformed over time. The deformation preventing film has a transmission factor of moisture and oxygen lower than that of the silicon oxide layer. The deformation preventing film is a silicon oxide film that is formed with energy higher than that used in a case that forms the silicon oxide layer. The deformation preventing film is a silicon nitride film or a metallic film.
1. A bimorph element comprising:
a silicon oxide layer;
a high expansion coefficient layer that is formed on the silicon oxide layer and has a thermal expansion coefficient higher than a thermal expansion coefficient of the silicon oxide layer; and
a deformation preventing film that is formed by depositing silicon oxide under plasma CVD using energy higher than that used in the silicon oxide layer forming step and covers a surface of the silicon oxide layer and prevents the silicon oxide layer from being deformed over time.
2. The bimorph element as claimed in claim 1 , wherein the deformation preventing film has a transmission factor of moisture and oxygen lower than that of the silicon oxide layer.
3. The bimorph element as claimed in claim 1 , wherein the deformation preventing film is a silicon oxide film that is formed with energy higher than that used in a case that forms the silicon oxide layer.
4. The bimorph element as claimed in claim 1 , wherein the deformation preventing film is a silicon nitride film.
5. The bimorph element as claimed in claim 1 , wherein the deformation preventing film is a metallic film.
6. The bimorph element as claimed in claim 1 , wherein the high expansion coefficient layer consists of copper.
7. A bimorph switch including a circuit substrate and a bimorph element, the circuit substrate having a fixed contact thereon, the bimorph element comprising:
a silicon oxide layer;
a high expansion coefficient layer That is formed on the silicon oxide layer and has a thermal expansion coefficient higher than a thermal expansion coefficient of the silicon oxide layer;
a deformation preventing film that is formed by depositing silicon oxide under plasma CVD using energy higher than that used in the silicon oxide layer forming step and covers a surface of the silicon oxide layer and prevents the silicon oxide layer from being deformed over time;
a traveling contact that is provided opposite the fixed contact, and the traveling contact being electrically connected to the fixed contact when the heater heats the high expansion coefficient layer and the silicon oxide layer.
8. A minor element including a bimorph element, the bimorph element comprising:
a silicon oxide layer;
a high expansion coefficient layer that is formed on the silicon oxide layer and has a thermal expansion coefficient higher than a thermal expansion coefficient of the silicon oxide layer;
a deformation preventing film that is formed by depositing silicon oxide under plasma CVD using energy higher than that used in the silicon oxide layer forming step and covers a surface of the silicon oxide layer and prevents the silicon oxide layer from being deformed over time;
a heater that heats the high expansion coefficient layer and the silicon oxide layer; and
a mirror that reflects light, the mirror being provided at a position of which a direction is changed on a surface of the bimorph element when the heater heats the high expansion coefficient layer and the silicon oxide layer.