Front side electrical contact for photodetector array and method of making same
View Patent ↗A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a central trench region in electrical communication with the first active layer beneath each of the cells. Sidewall active diffusion regions extend the trench depth along each sidewall and are formed by doping at least a portion of the sidewalls with a dopant of first conductivity. A first contact electrically communicates with the first active layer beneath each of the cells via the central trench region. A plurality of second contacts each electrically communicate with the second active layer of one of the plurality of cells. The first and second contacts are formed on the front surface of the photodiode.
1. A photodiode comprising:
a semiconductor having a front surface and a backside surface and including:
a first active layer having a first conductivity,
a second active layer having a second conductivity opposite the first conductivity, and
an intrinsic layer separating the first and second active layers;
a plurality of isolation trenches having a depth extending through the second active layer and the intrinsic layer into the first active layer, the isolation trenches being arranged to divide the photodiode into a plurality of cells, and the isolation trenches being arranged to form a central trench region in electrical communication with the first active layer beneath each of the plurality of cells;
sidewall active diffusion regions extending the isolation trench depth along each isolation trench sidewall formed by doping at least a portion of sidewalls of the isolation trenches with a dopant of the first conductivity;
a conductive material filling the isolation trenches;
a first electrical contact in electrical communication with the first active layer beneath each of the plurality of cells via the central trench region; and
a plurality of second electrical contacts each in electrical communication with the second active layer of one of the plurality of cells, the first electrical contact and the plurality of second electrical contacts being formed on the front surface of the photodiode.
2. The photodiode of claim 1 , wherein the isolation trenches are arranged in the central trench region to have a lateral spacing between adjacent trenches that is no more than twice a lateral depth of each of the sidewall active diffusion regions such that sidewall active diffusion regions extend substantially continuously laterally between adjacent trenches in the central trench region.
3. The photodiode of claim 2 , wherein the isolation trenches are arranged in the central trench region to have a lateral spacing between adjacent trenches that is substantially equal to twice a lateral depth of each of the sidewall active diffusion regions.
4. The photodiode of claim 1 , wherein the trenches are arranged in the central trench region to have a lateral spacing between adjacent trenches greater than twice a lateral depth of each of the sidewall active diffusion regions, such that sidewall active diffusion regions extend laterally only partially between adjacent trenches in the central trench region.
5. The photodiode of claim 1 , wherein the first conductivity is one of p-type and n-type, and the second conductivity is the other one of p-type and n-type.
6. The photodiode of claim 1 , wherein the conductive material is polysilicon.
7. The photodiode of claim 6 , wherein the polysilicon is doped with a dopant of the first conductivity.
8. The photodiode of claim 6 , wherein at least a portion of an upper surface of the intrinsic layer is doped with a dopant of the first conductivity.
9. The photodiode of claim 1 , wherein the first active layer is one of cathodic and anodic and the second active layer is the other of cathodic and anodic.
10. The photodiode of claim 1 , wherein each isolation trench is substantially linear in shape along the depth of the trench and has a longitudinal axis.
11. The photodiode of claim 10 , wherein the isolation trench longitudinal axes are substantially perpendicular to the front surface.
12. A photodiode produced by a method comprising:
providing a semiconductor having a front surface and a backside surface and including:
a first active layer having a first conductivity,
a second active layer having a second conductivity opposite the first conductivity, and
an intrinsic layer separating the first and second active layers;
forming a plurality of isolation trenches having a depth extending through the second active layer and the intrinsic layer into the first active layer, the isolation trenches being arranged to divide the photodiode into a plurality of cells, and the isolation trenches being arranged to form a central trench region in electrical communication with the first active layer beneath each of the plurality of cells;
doping at least a portion of sidewalls of the isolation trenches with a dopant of the first conductivity to form a sidewall active diffusion region extending the isolation trench depth along each isolation trench sidewall;
filling the isolation trenches with a conductive material;
forming a first electrical contact in electrical communication with the first active layer beneath each of the plurality of cells via the central trench region; and
forming a plurality of second electrical contacts each in electrical communication with the second active layer of one of the plurality of cells, the first electrical contact and the plurality of second electrical contacts being formed on the front surface of the photodiode.