IP Library › Assignment 022076/0237
Patent Assignment
Reel/Frame 022076/0237

Assignment of Assignor's Interest

Recorded: 2009-01-08 Received: 2009-01-08 Pages: 12
Assignor
ICEMOS TECHNOLOGY CORPORATION
Executed: 2008-09-17
Assignee
ICEMOS TECHNOLOGY LTD.
5 HANNAHSTOWN HILL, BELFAST, GBX, BT17 0LT, UNITED KINGDOM
Covered Properties (57)
Reinforcement Module for a Motor Vehicle Body
Application: 12/297,046 →
Method for Managing Electric Power Within a Powertrain System
Application: 12/243,106 →
Vehicle Subsystem Control Method and Apparatus
Application: 12/293,418 →
Torsion-Beam Rear Axle of a Vehicle
Application: 12/207,336 →
Technique for Stable Processing of Thin/Fragile Substrates
Application: 12/203,995 →
Photodetector Array Using Isolation Diffusions as Crosstalk Inhibitors Between Adjacent Photodiodes
Application: 12/204,371 →
Silicon Wafer Having Through-Wafer Vias
Application: 12/202,638 →
Bonded-Wafer Superjunction Semiconductor Device
Application: 12/191,035 →
Front Lip Pin/Nip Diode Having a Continuous Anode/Cathode
Application: 12/175,586 →
Photodetector Array Using Isolation Diffusions as Crosstalk Inhibitors Between Adjacent Photodiodes
Application: 12/142,185 →
Front Side Electrical Contact for Photodetector Array and Method of Making Same
Application: 12/116,638 →
Positive-Intrinsic-Negative (Pin)/Negative-Intrinsic-Positive (Nip) Diode
Application: 12/116,286 →
Methods for Manufacturing a Trench Type Semiconductor Device Having a Thermally Sensitive Refill Material
Bonded Wafer Substrate for Use in Mems Structures
Application: 61/040,210 →
Multi-Directional Trenching of a Plurality of Dies in Manufacturing Superjunction Devices
Application: 12/031,909 →
Multi-Directional Trenching of a Die in Manufacturing Superjunction Devices
Application: 12/031,895 →
Trench Depth Monitor for Semiconductor Manufacturing
Application: 61/028,321 →
Multi-Angle Rotation for Ion Implantation of Trenches in Superjunction Devices
Application: 61/028,215 →
Methods for Manufacturing a Trench Type Semiconductor Device Having a Thermally Sensitive Refill Material
Application: 12/029,857 →
Superjunction Device Having a Dielectric Termination and Methods for Manufacturing the Device
Application: 61/020,540 →
Superjunction Devices Having Narrow Surface Layout of Terminal Structures and Methods of Manufacturing the Devices
Methods for Manufacturing a Trench Type Semiconductor Device Having a Thermally Sensitive Refill Material
Superjunction Devices Having Narrow Surface Layout of Terminal Structures and Methods of Manufacturing the Devices
Application: 11/962,530 →
Silicon Wafer Having Through-Wafer Vias With A Predetermined Geometric Shape
Application: 11/925,329 →
Multi-Directional Trenching in Manufacturing Superjuction Devices
Application: 60/975,878 →
Semiconductor Devices with Sealed, Unlined Trenches and Methods of Forming Same
Method of Manufacturing a Photodiode Array with Through-Wafer Vias
Varying Pitch Adapter and a Method of Forming a Varying Pitch Adapter
Superjunction Devices Having Narrow Surface Layout of Terminal Structures and Methods of Manufacturing the Devices
Application: 60/915,939 →
Technique for Stable Processing of Thin/Fragile Substrates
Methods for Manufacturing a Trench Type Semiconductor Device Having a Thermally Sensitive Refill Material
Application: 60/913,425 →
Methods for Manufacturing a Trench Type Semiconductor Device Having a Thermally Sensitive Refill Material
Application: 60/913,432 →
Front Side Electrical Contact for Photodetector Array and Method of Making Same
Application: 11/681,543 →
Photodiode Having Increased Proportion of Light-Sensitive Area to Light-Insensitive Area
Application: 11/681,576 →
Technique for Stable Processing of Thin/Fragile Substrates
Application: 11/675,407 →
Backlit Photodiode and Method of Manufacturing a Backlit Photodiode
Application: 11/609,934 →
Front Lit Pin/Nip Diode Having a Continuous Anode/Cathode
Application: 11/554,437 →
Photodetector Array Using Isolation Diffusions as Crosstalk Inhibitors Between Adjacent Photodiodes
Application: 11/548,546 →
Bonded-Wafer Superjunction Semiconductor Device
Application: 11/466,132 →
Semiconductor Devices With Sealed, Unlined Trenches and Methods of Forming Same
Application: 60/822,263 →
Semiconductor Devices With Sealed, Unlined Trenches and Methods of Forming Same
Application: 60/822,261 →
Positive-Intrinsic-Negative (Pin) / Negative-Intrinsic-Positive (Nip) Diode
Application: 11/463,613 →
Method of Manufacturing a Photodiode Array with Through-Wafer Vias
Application: 60/821,993 →
Varying Pitch Adapter and a Method of Forming a Varying Pitch Adapter
Application: 60/806,150 →
Superjunction Device Having Oxide Lined Trenches and Method for Manufacturing a Superjunction Device Having Oxide Lined Trenches
Application: 10/596,720 →
Silicon Wafer Having Through-Wafer Vias
Technique for Stable Processing of Thin/Fragile Substrates
Application: 11/380,457 →
Superjunction Device Having Oxide Lined Trenches and Method for Manufacturing a Superjunction Device Having Oxide Lined Trenches
Front side electrical contact for photodetector array and method of making same
Application: 60/778,481 →
Photodiode having increased proportion of light-sensitive area to light-insensitive area
Application: 60/778,480 →
Backlit photodiode and method of manufacturing a backlit photodiode
Application: 60/750,873 →
Front lit PIN/NIP diode having a continuous anode/cathode
Application: 60/731,171 →
Detector array using isolation diffusions as crosstalk inhibitors between adjacent pixels
Application: 60/725,876 →
Bonded-wafer superjunction semiconductor device
Application: 60/710,234 →
Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode
Application: 60/706,918 →
Silicon wafer having through-wafer vias
Application: 60/677,510 →
Superjunction device having oxide lined trenches and method for manufacturing a superjunction device having oxide lined trenches
Application: 60/673,935 →