Cap layers including aluminum nitride for nitride-based transistors
View Patent ↗High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
1. A Group III-nitride high electron mobility transistor (HEMT), comprising:
a Group III-nitride based channel layer;
a Group III-nitride based barrier layer on the channel layer;
a multilayer cap layer on the barrier layer, the multilayer cap layer including a layer including aluminum nitride (AlN) on the barrier layer and a gallium nitride (GaN) layer on the layer including AlN; and
a SiN passivation layer on the GaN layer.
2. The HEMT of claim 1 , wherein the layer including AlN comprises Aluminum gallium nitride (AlGaN), aluminum indium nitride (AlInN) and/or AlN.
3. The HEMT of claim 1 , wherein the layer including AlN has a thickness of from about 3.0 to about 30.0 Å.
4. The HFMT of claim 1 , wherein the GaN layer comprises an aluminum gallium nitride (AlGaN) layer having a low mole-fraction.
5. The HEMT of claim 4 , wherein the mole-fraction of the AlGaN layer is from about zero percent of a mole-fraction of the barrier layer to about the mole-fraction of the barrier layer.
6. The HEMT of claim 5 , wherein the mole-fraction of the AlGaN layer is greater than the mole-fraction of the barrier layer.
7. The HEMT of claim 1 , wherein the layer including AlN comprises an aluminum gallium nitride (AlGaN) layer having a high mole-fraction.
8. A Group III-nitride high electron mobility transistor (HEMT), comprising:
a Group III-nitride based channel layer;
a Group III-nitride based barrier layer on the channel layer; and
a multilayer cap layer on the barrier layer, the multilayer cap layer including an aluminum gallium nitride (AlGaN) layer on the barrier layer and an aluminum nitride (AlN) layer on the AlGaN layer.
9. The HEMT of claim 8 , wherein the AlN layer has a thickness of about 10 Å.
10. The HEMT of claim 9 , further comprising a gate contact that is not recessed into the multilayer cap layer and wherein a thickness of the AlGaN layer is from about 5.0 to about 50.0 Å.
11. The HEMT of claim 8 , wherein the AlN layer comprises an AlGaN layer having a high mole-fraction.
12. A Group III-nitride high electron mobility transistor (HEMT), comprising:
a Group III-nitride based channel layer;
a Group III-nitride based barrier layer on the channel layer; and
a multilayer cap layer on the barrier layer, the multilayer cap layer including an aluminum gallium nitride (AlGaN) layer on the barrier layer, an aluminum nitride (AlN) layer on the AlGaN layer and a gallium nitride (GaN) layer on the AlN layer.
13. The HEMT of claim 12 , wherein the AlN layer has a thickness of about 10.0 Å and the GaN layer has a thickness of about 20 Å.
14. The HEMT of claim 12 , wherein the HEMT has a barrier of greater than about 3.0 V.
15. The HEMT of claim 12 , wherein the GaN layer comprises an AlGaN layer having a low mole-fraction.
16. The HEMT of claim 15 , wherein the mole-fraction of the AlGaN layer is from about zero percent of a mole-fraction of the barrier layer to about the mole-fraction of the barrier layer.
17. The HEMT of claim 16 , wherein the mole-fraction of the AlGaN layer is greater than the mole-fraction of the barrier layer.
18. The HEMT of claim 12 , wherein the AlN layer comprises an AlGaN layer having a high mole-fraction.