IP Library › Granted Patent US 8,104,428
Granted Patent B2
US 8,104,428 · App. 11/689,119 · Granted Jan 31, 2012

Plasma processing apparatus

Assignee: Tokyo Electron Limited
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Quick Facts
Patent No.
US 8,104,428
App. No.
11/689,119
Granted
Jan 31, 2012
Kind
B2
Abstract

A plasma processing apparatus that enables formation of a deposit film on a surface of a grounding electrode to be prevented. A substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that applies radio frequency electrical power into the processing space, a DC electrode that applies a DC voltage into the processing space, and a grounding electrode at least part of which is exposed in the substrate processing chamber. The grounding electrode is disposed in a corner portion formed through intersection of a plurality of internal surfaces in the substrate processing chamber.

Claims (11)

1. A plasma processing apparatus comprising:

a substrate processing chamber having therein a processing space in which plasma processing is carried out on a substrate;

an RF electrode that applies radio frequency electrical power into said processing space;

a DC electrode that applies a DC voltage into said processing space;

a grounding electrode, at least part of which is exposed in said substrate processing chamber;

a mounting stage on a top of which the substrate is mounted; and

an exhaust plate disposed in an exhaust flow path formed between an inner wall of said substrate processing chamber and a side face of the mounting stage,

wherein said grounding electrode is disposed in a corner portion formed through an intersection of the side face of said mounting stage and said exhaust plate so as to be contained within a space defined by distances of within 5 mm from a position where the side face of said mounting stage and said exhaust plate intersect,

wherein said grounding electrode is comprised of a conductive body exposed directly to said processing space,

wherein said grounding electrode is comprised of a member other than said exhaust plate, a wall portion of said substrate processing chamber and said mounting stage, and wherein the exhaust plate is fixed within the plasma processing apparatus.

2. A plasma processing apparatus as claimed in claim 1 , wherein said grounding electrode is comprised of a plurality of divided conductive bodies dispersed over the side face of said mounting stage.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2007
From: HONDA, MASANOBU; KODAMA, NORIAKI
To: TOKYO ELECTRON LIMITED
Reel/Frame 019043/0176 →
Priority Claims (1)
JP 2006-081352 · Mar 23, 2006 · national
Continuity (2)
Provisional Application 60789145 · Apr 5, 2006
Related Publication 20070234960A1 · Oct 11, 2007