High voltage field effect device and method
View Patent ↗Methods and apparatus are provided for a MOSFET ( 50, 99, 199 ) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) ( 70 ) and drain (D) ( 76 ) are spaced apart by a channel ( 90 ) underlying a gate ( 84 ) and one or more carrier drift spaces ( 92, 92 ′) serially located between the channel ( 90 ) and the source ( 70, 70 ′) or drain ( 76, 76 ′). A buried region ( 96, 96 ′) of the same conductivity type as the drift space ( 92, 92 ′) and the source ( 70, 70 ′) or drain ( 76, 76 ′) is provided below the drift space ( 92, 92 ′), separated therefrom in depth by a narrow gap ( 94, 94 ′) and ohmically coupled to the source ( 70, 70 ′) or drain ( 76, 76 ′). Current flow ( 110 ) through the drift space produces a potential difference (Vt) across this gap ( 94, 94 ′). As the S-D voltage (Vo) and current ( 109 , Io) increase, this difference (Vt) induces high field conduction between the drift space ( 92, 92 ′) and the buried region ( 96, 96 ′) and diverts part ( 112 , It) of the S-D current ( 109 , Io) through the buried region ( 96, 96 ′) and away from the near surface portions of the drift space ( 92, 92 ′) where breakdown generally occurs. Thus, BVdss is increased.
1. A MOSFET having a first surface and comprising:
a source region of a first conductivity type at the first surface;
a drain region of the first conductivity type, spaced apart from the source region at the first surface;
a channel region of a second conductivity type opposite the first conductivity type, located between the source and drain regions at the first surface;
a first drift space of the first conductivity type coupling the channel region and the drain region at the first surface; and
a first buried region of the first conductivity type beneath and separated from the first drift space by a narrow gap of the second conductivity type, wherein the buried region is ohmically coupled to the drain region.
2. The MOSFET of claim 1 further comprising:
a second drift space of the first conductivity type located between the source region and the channel region; and
a second buried region of the first conductivity type beneath and separated from the second drift space by a narrow gap of the second conductivity type, wherein the second buried region is ohmically coupled to the source region.
3. The MOSFET of claim 1 , further comprising:
a first isolation region laterally separated from the drain region; and
wherein the first drift space extends laterally beyond the drain region and intersects the first isolation region.
4. The MOSFET of claim 3 wherein the first buried region extends laterally beyond the drain region and intersects the first isolation region.
5. The MOSFET of claim 1 , wherein the first buried region is ohmically coupled to the drain region by a sub-surface region of the same conductivity type as the first buried region and the drain region.
6. The MOSFET of claim 1 further comprising:
a further region of the second conductivity type underlying the source and drain regions and the buried region; and
wherein the narrow gap and the channel region are part of the further region.
7. A semiconductor device having a surface, comprising:
a first device region extending to the surface, configured to inject current into the device;
a second device region extending to the surface and spaced apart from the first device region at the surface, configured whereby current injected at the first device region flows at least in part near the surface to the second device region and is extracted from the semiconductor device via the second device region; and
a third device region of the same conductivity type as the second device region, ohmically coupled to the first or second device region and located between the first and second device regions;
a fourth device region of the same conductivity type as the first or second device region, located beneath the third device region and electrically spaced apart therefrom in depth by a narrow gap configured to provide highly non-linear conduction between the third and fourth device regions as current flow from the first to the second device regions through the third device region increases, wherein the fourth device regions is configured to divert a significant portion of the current flow between the first and second device regions through the fourth device region by means of said highly non-linear conduction through the narrow gap.
8. The semiconductor device of claim 7 , further comprising a fifth device region located beneath the first or second device region for ohmically coupling the fourth device region thereto.
9. The semiconductor device of claim 7 further comprising a lateral isolation wall spaced apart from the first or second device regions, wherein the third device region laterally terminates on the isolation region.
10. The semiconductor device of claim 9 wherein the fourth device region laterally terminates on the isolation region.
11. The semiconductor device of claim 7 wherein the third and fourth device regions are adjacent one of the first or second device regions.
12. The semiconductor device of claim 11 wherein the third and fourth device regions are adjacent both of the first or second device regions.
13. The semiconductor device of claim 7 wherein the highly non-linear conduction comprises exponentially rising conduction.
14. The semiconductor device of claim 7 wherein the first device region is a source region, the second device region is a drain region, the third device region is a drift space between the source-drain regions and the fourth device region is a buried region underlying the drift space.