Granted Patent B2

US 7,888,756 · App. 11/689,722 · Granted Feb 15, 2011

Abstract

Claims (35)

1. A magnetic tunnel junction (MTJ) structure of the type having a tunnel barrier positioned between a fixed ferromagnetic layer and a free ferromagnetic layer, the tunnel barrier comprising:

a first barrier layer contacting either the fixed ferromagnetic layer or the free ferromagnetic layer, wherein the first barrier layer transmits a high spin polarization and is selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides; and

a second barrier layer contacting the first barrier layer, wherein the second barrier layer has a barrier height of less than about 0.5 eV and comprises TiO x

a third barrier layer formed on the second barrier layer and contacting the free ferromagnetic layer, the third barrier layer selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides,

wherein the first barrier layer is formed on the fixed ferromagnetic layer and the second barrier layer is formed on the first barrier layer.

2. The MTJ structure of claim 1 , wherein the first barrier layer transmits a spin polarization greater than about 40%.

3. The MTJ structure of claim 2 , wherein the first barrier layer comprises MgO.

4. The MTJ structure of claim 1 , wherein the third barrier layer transmits a high spin polarization.

5. The MTJ structure of claim 4 , wherein the third barrier layer comprises MgO.

6. The MTJ structure of claim 1 , wherein the fixed ferromagnetic layer, the free ferromagnetic layer, and the tunnel barrier together operate as an MRAM device having a resistance-area product that is less than about 30Ωμm 2 .

7. The MTJ structure of claim 1 , wherein the fixed ferromagnetic layer, the free ferromagnetic layer, and the tunnel barrier together operate as a spin-transfer MRAM device.

8. A method for fabricating a magnetic tunnel junction (MTJ) tunnel barrier between a fixed ferromagnetic layer and a free ferromagnetic layer, comprising:

forming a first barrier layer such that it transmits a high spin polarization and is formed from a material selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides;

forming a second barrier layer such that it has a barrier height of less than about 0.5 eV, contacts the first barrier layer, and comprises TiO x ; and

forming the fixed ferromagnetic layer and the free ferromagnetic layer such that at least one of the ferromagnetic layers contacts the first barrier layer.

9. The method of claim 8 , wherein forming the first barrier layer includes forming a metallic layer and exposing the metallic layer to an oxygen environment.

10. The method of claim 9 , wherein forming the first barrier layer includes forming a layer of Mg.

11. The method of claim 8 , including:

forming the first barrier layer on the fixed ferromagnetic layer;

forming the second barrier layer on the first barrier layer;

forming a third barrier layer on the second barrier layer, the third barrier layer selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides; and

forming the free ferromagnetic layer on the third barrier layer.

12. The method of claim 11 , wherein forming the third barrier layer includes forming a MgO layer.

13. A multi-layer MTJ structure comprising:

a fixed ferromagnetic layer;

a multilayer barrier structure located on the fixed ferromagnetic layer;

a free ferromagnetic layer located on the multilayer barrier structure;

wherein the multilayer barrier structure comprises a first, a second, a third, and a fourth barrier layer, and wherein the first and fourth barrier layers each transmit a high spin polarization and are selected from the group consisting of metal oxides, metal nitrides and metal oxynitrides, and the second barrier layer has a barrier height of less than about 0.5eV and comprises TiO x .

14. The MTJ structure of claim 13 , wherein the first and fourth barrier layers transmit a spin polarization greater than approximately 40%.

15. The MTJ structure of claim 13 , wherein the first and fourth barrier layers comprise MgO.

16. A method for fabricating a magnetic tunnel junction (MTJ) tunnel barrier between a fixed ferromagnetic layer and a free ferromagnetic layer, comprising:

forming a first barrier layer comprising MgO on the fixed ferromagnetic layer such that it transmits a high spin polarization;

forming a second barrier layer comprising TiO x on the first barrier layer;

forming a third barrier layer comprising MgO on the second barrier layer; and

forming the free ferromagnetic layer on the third barrier layer.

Assignments (16)