Patent Assignment
Reel/Frame 022366/0467
Assignment of Assignor's Interest
Recorded: 2009-03-09
Received: 2009-03-09
Pages: 14
Assignor
FREESCALE SEMICONDUCTOR, INC.
Executed: 2009-02-25
Assignee
EVERSPIN TECHNOLOGIES, INC.
1300 N. ALMA SCHOOL ROAD, CHANDLER, AZ, 85224, UNITED STATES
Covered Properties
(31)
Two-Axis Magnetic Field Sensor with Multiple Pinning Directions
Application:
12/117,396 →
Magnetic Sensor Design for Suppression of Barkhausen Noise
Application:
12/055,482 →
Magnetic Tunnel Junction Device
Application:
12/035,011 →
Methods and Structures for Exchange-Coupled Magnetic Multi-Layer Structure with Improved Operating Temperature Behavior
Application:
11/938,816 →
Magnetic Element Having Reduced Current Density
Application:
11/870,856 →
Low Power Magnetoelectronic Device Structures Utilizing Enhanced Permeability Materials
Application:
11/867,189 →
Electronic Device Including a Magneto-Resistive Memory Device and a Process for Forming the Electronic Device
Application:
11/864,409 →
Methods and Structures for an Integrated Two-Axis Magnetic Field Sensor
Application:
11/848,053 →
Methods and Apparatus for a Synthetic Anti-Ferromagnet Structure with Improved Thermal Stability
Application:
11/839,044 →
Magnetoelectronic Device Having Enhanced Permeability Dielectric and Method of Manufacture
Application:
11/755,498 →
Enhanced Permeability Device Structures and Method
Application:
11/740,066 →
Magnetoresistive Device and Method of Packaging Same
Application:
11/739,625 →
Antifuse Circuit and Method for Selectively Programming Thereof
Application:
11/737,506 →
Spin-Transfer Mram Structure and Methods
Application:
11/736,960 →
Mram Tunnel Barrier Structure and Methods
Application:
11/689,722 →
Mram Free Layer Synthetic Antiferromagnet Structure and Methods
Application:
11/679,982 →
Magnetic Tunnel Junction Structure and Method
Application:
11/601,129 →
Electronic assembly having magnetic tunnel junction voltage sensors and method for forming the same
Application:
11/590,276 →
Sensor Having Moveable Cladding Suspended Near a Magnetic Field Source
Application:
11/584,473 →
Spin-Transfer Based Mram with Reduced Critical Current Density
Application:
11/511,691 →
Mram Synthetic Antiferromagnet Structure
Application:
11/444,089 →
Non-Volatile Memory Cell and Methods Thereof
Application:
11/438,541 →
Methods and Apparatus for a Memory Device with Self-Healing Reference Bits
Application:
11/416,850 →
Methods and Apparatus for a Synthetic Anti-Ferromagnet Structure with Reduced Temperature Dependence
Application:
11/406,566 →
Magnetic Tunnel Junction Pressure Sensors and Methods
Application:
11/262,064 →
Magnetic Tunnel Junction Temperature Sensors and Methods
Application:
11/239,884 →
Magnetic Tunnel Junction Temperature Sensors
Application:
11/240,514 →
Oscillator and Method of Manufacture
Application:
11/225,973 →
Magnetic Tunnel Junction Sensor
Application:
11/192,569 →
Toggle Memory Burst
Application:
11/047,544 →
Compositions and methods for the electroless deposition of NiFe on a work piece
Application:
10/702,909 →