Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence

1. A synthetic anti-ferromagnet (SAF) structure comprising:

a bottom ferromagnetic layer;

a first insert ion layer comprising a first material and formed on the bottom ferromagnetic layer;

a coupling layer formed on the first insertion layer;

a second insertion layer comprising a second material different from the first material and formed on the coupling layer; and

a top ferromagnetic layer formed on the second insertion layer;

wherein the bottom ferromagnetic layer has a first temperature coefficient of H sat , the first insertion layer has a second temperature coefficient of H sat , the top ferromagnetic layer has a third temperature coefficient of H sat , and the second insertion layer has a fourth temperature coefficient of H sat , and wherein the second temperature coefficient of H sat is less than the first temperature coefficient of H sat , and the fourth temperature coefficient of H sat is less than the third temperature coefficient of H sat .

2. The structure of claim 1 , wherein at least one of the first insertion layer and second insertion layer comprise CoFe.

3. The structure of claim 2 , wherein at least one of the first insertion layer and the second insertion layer include greater than approximately nine atomic percent (90°) iron.

4. The structure of claim 2 , wherein the other of the first insertion layer and the second insertion layer comprise CoFeX, where X is selected from the group consisting of boron tantalum, zirconium and nickel.

5. The structure of claim 4 , wherein the at least one of the first insertion layer and the second insertion layer comprises CoFeB, wherein Fe is greater than about nine atomic percent (9%), and B is greater than about nine atomic percent (9%).

6. The structure of claim 1 , wherein the first insertion layer has a thickness of less than approximately 10 Å and the second insertion layer has a thickness of less than approximately 10 Å.

7. The structure of claim 1 , wherein the bottom ferromagnetic layer and the top ferromagnetic layer are selected from the group consisting of nickel-iron (NiFe) and cobalt-iron-boron (CoFeB).

8. The structure of claim 1 , wherein the bottom ferromagnetic layer has a thickness greater than approximately 25 Å, and the second ferromagnetic layer has a thickness greater than approximately 25 Å.

9. The structure of claim 1 , wherein the coupling layer comprises at least one of ruthenium, chromium, vanadium, molybdenum, and their alloys.

10. The structure of claim 1 , wherein at least one of the first insertion layer or second insertion layer are selected from materials for which the structure inhibits oxygen encroachment.

11. The structure of claim 1 , wherein the structure is further configured to provide a uniaxial anisotropy (H k ) of less than approximately 30 Oe.

12. The structure of claim 1 , wherein the first insertion layer comprises cobalt-iron (CoFe) and the second insertion layer comprises cobalt-iron-boron (CoFeB).

13. A method for reducing temperature dependence in a magnetic tunnel junction comprising a coupling layer disposed between a fixed layer and a free-layer synthetic anti-ferromagnet structure, the free-layer synthetic anti-ferromagnet structure comprising a bottom ferromagnetic layer; a first insertion layer on the bottom ferromagnetic layer; a coupling layer on the first insertion layer; a second insertion layer on the coupling layer; and a top ferromagnetic layer on the second insertion layer;

the method comprising:

controlling the temperature dependence by:

forming the first insertion layer with a first material; and

forming the second insertion layer with a second material different from the first material;

wherein the bottom ferromagnetic layer has a first temperature coefficient of H sat , the first insertion layer has a second temperature coefficient of H sat , the top ferromagnetic layer has a third temperature coefficient of H sat , and the second insertion layer has a fourth temperature coefficient of H sat , and wherein the second temperature coefficient of H sat is less than the first temperature coefficient of H sat , and the fourth temperature coefficient of H sat is less than the third temperature coefficient of H sat .

14. The method of claim 13 , wherein the step of forming the first insertion layer includes forming a layer of material selected from the group consisting of CoFeB and CoFe, and the step of forming the second insertion layer includes forming a layer of the other of the material selected from the group consisting of CoFeB and CoFe, wherein iron content of the first insertion layer is greater than approximately nine atomic percent (9%), and iron content of the second insertion layer is greater than approximately nine atomic percent (9%).

15. The method of claim 14 , wherein the iron content of the first insertion layer is less than approximately twenty five atomic percent (25%), and the iron content of the second insertion layer is less than approximately twenty five atomic percent (25%).

16. The method of claim 13 , wherein the step of forming the first insertion layer includes forming a layer having a thickness of less than approximately 10 Å and the step of forming the second insertion layer includes forming a layer having a thickness of less than approximately 10 Å.

17. The method of claim 13 , wherein the step of forming the bottom ferromagnetic layer and the step of forming the top ferromagnetic layer includes forming a layer of NiFe having a thickness greater than approximately 25 Å.

18. The method of claim 13 , wherein the step of forming the bottom ferromagnetic layer and the step of forming the top ferromagnetic layer includes forming a layer of CoFeB having a thickness greater than approximately 25 Å.