Spin-transfer MRAM structure and methods
View Patent ↗A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet (SAF). The SAF may include two antiparallel fixed magnet layers separated by a coupling layer. To improve manufacturability, the layers of the SAF may be non-symmetrical (e.g., having different thicknesses or different inherent anisotropies) to assist in achieving proper alignment during anneal. The total magnetic moment of the SAF may be greater than that of the free magnet layer.
1. A spin-transfer MRAM bit comprising a free magnet layer positioned between a first spin polarizer and a second spin polarizer, wherein at least one of the first and second spin polarizers comprises an unpinned synthetic antiferromagnet (SAF), wherein the unpinned SAF has a first fixed magnet layer with a first thickness, and a second fixed magnet layer with a second thickness that is not equal to the first thickness, and a coupling layer positioned between the first and second fixed magnet layers.
2. The spin-transfer MRAM bit of claim 1 , wherein the free magnet layer comprises CoFeB, and the first and second fixed magnet layers comprise CoFe based alloys.
3. The MRAM bit of claim 1 , further comprising:
a third fixed magnet layer; and
a second coupling layer positioned between the second fixed magnet layer and the third fixed magnet layer, wherein a thickness of the first fixed magnet layer is substantially equal to a thickness of the third fixed magnet layer, and is less than a thickness of the second magnet layer.
4. The spin-transfer MRAM bit of claim 1 , wherein the unpinned SAF has a first fixed layer and a second fixed layer that together exhibit a magnetic moment difference of between approximately 0.5 and 10.0 percent.
5. The spin-transfer MRAM bit of claim 1 , wherein the SAF has a total magnetic moment that is greater than a total magnetic moment of the free magnet layer.
6. A spin-transfer MRAM bit comprising a free magnet layer positioned between a first spin polarizer and a second spin polarizer, wherein at least one of the first and second spin polarizers comprises an unpinned synthetic antiferromagnet (SAF), wherein the unpinned SAF has a first fixed magnet layer with a first intrinsic anisotropy, and a second fixed magnet layer with a second intrinsic anisotropy that is not equal to the first intrinsic anisotropy, and a coupling layer positioned between the first and second fixed magnet layers.
7. The MRAM device of claim 6 , wherein the free magnet layer comprises CoFeB, and the first and second fixed magnet layers comprise CoFe based alloys.
8. The spin-transfer MRAM bit of claim 6 , wherein the SAF has a total magnetic moment that is greater than a total magnetic moment of the free magnet layer.
9. A method for forming a spin-transfer MRAM bit, comprising:
forming a first spin polarizer;
forming a first nonmagnetic spacer layer over the first spin polarizer;
forming a free magnet layer over the first nonmagnetic spacer layer;
forming a second nonmagnetic spacer layer over the free magnet layer; and
forming a second spin polarizer over the second nonmagnetic spacer layer;
wherein the step of forming a first spin polarizer or the step of forming the second spin polarizer includes forming an unpinned synthetic antiferromagnet (SAF), wherein the first fixed magnet layer is formed such that it has a first thickness, and the second fixed magnet layer is formed such that it has a second thickness that is not equal to the first thickness, and it has a coupling layer positioned between the first and second fixed magnet layers.
10. The method of claim 9 , wherein forming the free magnet layer includes depositing a layer of CoFeB, and forming the first and second fixed magnet layers includes depositing layers of CoFe based alloys.
11. The method of claim 9 , wherein forming the SAF includes forming the SAF such that it has a total magnetic moment that is greater than a total magnetic moment of the free magnet layer.
12. The method of claim 9 , wherein forming the first and second fixed magnet layers includes forming the first magnet layer such that it has a magnetic moment that is different from a magnetic moment of the second magnet layer by approximately 0.5 and 10.0 percent.
13. The method of claim 9 , further including:
forming a second coupling layer over the second fixed magnet layer;
forming a third fixed magnet layer over the second coupling layer such that a thickness of the first fixed magnet layer is substantially equal to a thickness of the third fixed magnet layer, and is less than a thickness of the second magnet layer.
14. A method for forming a spin-transfer MRAM bit, comprising:
forming a first spin polarizer;
forming a first nonmagnetic spacer layer over the first spin polarizer;
forming a free magnet layer over the first nonmagnetic spacer layer;
forming a second nonmagnetic spacer layer over the free magnet layer; and
forming a second spin polarizer over the second nonmagnetic spacer layer;
wherein the step of forming a first spin polarizer or the step of forming the second spin polarizer includes forming an unpinned synthetic antiferromagnet (SAF), and wherein the unpinned SAF has a first fixed magnet layer with a first intrinsic anisotropy, a second fixed magnet layer with a second intrinsic anisotropy that is not equal to the first intrinsic anisotropy, and a coupling layer positioned between the first and second fixed magnet layers.
15. The method of claim 14 , wherein forming the free magnet layer includes depositing a layer of CoFeB, and forming the first and second fixed magnet layers includes depositing layers of CoFe based alloys.
16. The method of claim 14 , wherein forming the SAF includes forming the SAF such that it has a total magnetic moment that is greater than a total magnetic moment of the free magnet layer.