Granted Patent B2

US 7,723,962 · App. 11/690,569 · Granted May 25, 2010

Assignee: Freescale Semiconductor, Inc.

Abstract

Claims (18)

1. An integrated circuit (IC) fabricated using complementary metal oxide semiconductor (CMOS) process, comprising:

a substrate including a thick oxide portion and a thin oxide portion;

a voltage regulator, disposed on the thick oxide portion, the voltage regulator having an input for receiving electrical power from a supply and having an output for supplying an output voltage at a regulated level, the voltage regulator needing a start-up period to elapse subsequent to first receiving electrical power from the supply to be able to maintain the output voltage at the regulated level;

a load circuit, coupled to the output of the voltage regulator, disposed on the thin oxide portion; and

a protection circuit, disposed on the thick oxide portion, coupled to the output of the voltage regulator and to the supply, for preventing the voltage of the output of the voltage regulator from exceeding the regulated level during the start-up period.

2. The IC of claim 1 in which the voltage regulator receives electrical power from the supply at a first voltage.

3. The IC of claim 2 in which the regulated level of the output voltage from the voltage regulator is at a second voltage, the second voltage being less than the first voltage.

4. An integrated circuit (IC), comprising:

a voltage regulator unit, the voltage regulator unit further comprising a voltage regulator circuit for outputting a voltage at a regulated level, and a protection circuit;

means for coupling a supply of electrical power to the voltage regulator unit; and

a load circuit coupled to the voltage regulator unit;

wherein the voltage regulator circuit needs a start-up period to elapse subsequent to first receiving electrical power from the supply to be able to maintain the output voltage at the regulated level, and wherein the protection circuit includes means for preventing the voltage regulator unit from outputting a voltage at a level higher than the regulated level during the start-up period.

5. The IC of claim 4 , in which the IC is fabricated using a dual-oxide complementary metal oxide semiconductor (CMOS) process.

6. The IC of claim 5 , in which the IC comprises at least one thin oxide area and at least one thick oxide area.

7. The IC of claim 6 in which the voltage regulator and the protection circuit are located in a thick oxide area.

8. The IC of claim 6 in which the load circuit is located in a thin oxide area.

9. The IC of claim 4 in which the voltage regulator receives the electrical power from the supply at a first voltage.

10. The IC of claim 9 in which the regulated level of the output voltage from the voltage regulator is at a second voltage, the second voltage being less than the first voltage.

Assignments (31)

Continuity (1)