IP Library Granted Patent US 9,079,244
Granted Patent B2
US 9,079,244 · App. 11/696,451 · Granted Jul 14, 2015

Method for dispersing nanoparticles and methods for producing nanoparticle thin films by using the same

Inventors: Seong Jae Choi (Gyeonggi-do, KR); Jae Young Choi (Gyeonggi-do, KR); Eun Joo Jang (Gyeonggi-do, KR); Bulliard Xavier (Seoul, KR); Yu Jin Kang (Seoul, KR); Wan Ki Bae (Seoul, KR); Kook Heon Char (Seoul, KR)
Assignees: SAMSUNG ELECTRONICS CO., LTD.; SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
B22F1/0088B22F2998/00H01L51/0036Y10T428/268
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Quick Facts
Patent No.
US 9,079,244
App. No.
11/696,451
Granted
Jul 14, 2015
Kind
B2
Abstract

Methods for producing nanoparticle thin films are disclosed. According to one of the methods, a nanoparticle thin film is produced by modifying the surface of nanoparticles to allow the nanoparticles to be charged, controlling an electrostatic attractive force between the charged nanoparticles and a substrate and a repulsive force between the individual nanoparticles by a variation in pH to control the number density of the nanoparticles arranged on the substrate.

Claims (16)

1. A method for producing a nanoparticle thin film, comprising:

modifying the surface of nanoparticles to form surface-modified particles;

wherein the surface of the nanoparticles are electrically charged by exchanging nonpolar capping molecules on the surface of the nanoparticles for charged materials;

dispersing the surface-modified nanoparticles in a buffer solution and removing nanoparticle aggregates therefrom;

after the removal of the nanoparticle aggregates, dispersing the surface-modified nanoparticles in a solvent to form a nanoparticle dispersion;

adjusting the pH of the nanoparticle dispersion to a range of 7 to 9 to form a pH controlled nanoparticle dispersion; and

arranging the nanoparticles contained in the pH-controlled nanoparticle dispersion on a substrate bearing a charge opposite to those of the surface modified nanoparticle by dip coating to utilize a capillary force, thereby forming a nanoparticle monolayer on the substrate, wherein the buffer solution is tris(hydroxymethyl)aminomethane buffer.

2. The method according to claim 1 , wherein the surface modification is performed at a reaction temperature of about 25 to about 200° C. for about 0.5 to about 10 hours.

3. The method according to claim 1 , wherein the charged material is selected from the group consisting of compounds having an amino group, a carboxylic group, a mercapto group and a phosphine group and having negative or positive charge.

4. The method according to claim 1 , wherein before being dispersed in the buffer solution, the surface modified nanoparticles are dried in ambient air or under vacuum.

5. The method according to claim 1 , wherein the nanoparticles are negatively charged, the buffer solution has a pH greater than 7, and the substrate is positively charged.

6. The method according to claim 1 , wherein the substrate is pretreated by washing the substrate and adsorbing a functional group on the surface of the washed substrate.

7. The method according to claim 6 , wherein the substrate is pretreated to have a coating of polyallylamine hydrochloride.

8. The method according to claim 1 , wherein the nanoparticles are selected from the group consisting of Group II-IV compound semiconductor particles, Group III-V compound semiconductor particles, Group IV-VI compound semiconductor particles, Group IV compound semiconductor particles, metal particles, magnetic particles, metal oxide nanoparticles and a combination comprising at least one of the foregoing particles.

9. The method according to claim 1 , wherein the pH of the nanoparticle dispersion is adjusted to a range of about 7 to about 8.

10. The method according to claim 1 , wherein the solvent is selected from the group consisting of water, polar solvents, and a tris buffer solution.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2007
From: CHOI, SEONG JAE; CHOI, JAE YOUNG; JANG, EUN JOO; XAVIER, BULLIARD; KANG, YU JIN; BAE, WAN KI; CHAR, KOOK HEON
To: SAMSUNG ELECTRONICS CO., LTD.; SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
Reel/Frame 019114/0602 →
Priority Claims (1)
KR 10-2006-0105648 · Oct 30, 2006 · national
Continuity (1)
Related Publication 20080102201A1 · May 1, 2008