Low-voltage organic thin film transistor and fabrication method thereof
View Patent ↗The present invention provides an organic thin film transistor (OTFT) being operatable at a low-voltage. The OTFT has a gate dielectric layer of ultra-thin metal oxide or a dual gate dielectric layer of metal oxide and organic dielectric. The metal oxide layer is self-grown to a thickness lower than 10 nm by direct oxidation of a metal gate electrode in O 2 plasma process at a temperature lower than 100° C. The gate electrode is deposited with pattern on a plastic or glass substrate. An organic semiconductor layer is deposited on the gate dielectric layer, and source/drain electrodes are formed thereon. In case the dual gate dielectric layer is used, the source/drain electrodes can be disposed under the organic semiconductor layer to realize a bottom contact structure.
1. A method of fabricating an organic thin film transistor, the method comprising:
forming a gate electrode by depositing metal on a substrate;
forming a gate dielectric layer on surfaces of the gate electrode by self-growing a metal oxide layer to a thickness lower than 10 nm through direct oxidation of the gate electrode in O 2 plasma process at a low temperature lower than 100° C.;
depositing an organic semiconductor layer on the gate dielectric layer; and
forming source/drain electrodes on the organic semiconductor layer such that the source/drain electrodes are spaced apart from each other.
2. The method of claim 1 , wherein the forming of the gate electrode and the forming of the gate dielectric layer are in-situ performed.
3. The method of claim 2 , wherein the depositing of the metal for the gate electrode is performed using a shadow mask with pattern.
4. The method of claim 1 , wherein the substrate is made of plastic or glass.