Optical fiber temperature sensor
An optical fiber temperature sensor has a sensing part composed of an optical fiber arranged at a temperature measurement point; a light source for injecting a light to the sensing part; a wavelength filter module for branching the Raman scattered light from the back scattered light generated at the sensing part; photoelectric detectors for detecting the Raman scattered light and a signal processing circuit for processing the electric signals from the photoelectric detectors, wherein the light source is a semiconductor laser having a wavelength bandwidth of 0.78 μm; the wavelength filter module has a longer wavelength side band pass filter for transmitting the Stokes light and a shorter wavelength side band pass filter for transmitting the anti-Stokes light; and the longer wavelength side band pass filter and the shorter wavelength side band pass filter do not allow the light having the wavelength band of the semiconductor laser to be transmitted.
1. An optical fiber temperature sensor comprising:
a sensing part composed of an optical fiber arranged at a temperature measurement point;
a light source injecting a light to the sensing part;
a wavelength filter module for branching a Raman scattered light from a back scattered light generated at said sensing part;
a photoelectric detector for detecting said Raman scattered light; and
a signal processing circuit for processing an electric signal from the photoelectric detector, wherein
said light source is a semiconductor laser having a wavelength of 0.78 μm;
said wavelength filter module is composed of a longer wavelength side band pass filter for transmitting a Stokes light and a shorter wavelength side band pass filter for transmitting an anti-Stokes light; and
the longer wavelength side band pass filter and the shorter wavelength side band pass filter do not allow the light having the wavelength band of said semiconductor laser to be transmitted,
a center wavelength of the pass band of said longer wavelength side band pass filter is shifted from the wavelength of the Stokes light toward the longer wavelength side; and
a center wavelength of the pass band of said shorter wavelength side band pass filter is shifted from the wavelength of the anti-Stokes light toward the shorter wavelength side.
2. The optical fiber temperature sensor according to claim 1 , wherein said semiconductor laser is not controlled to be a constant temperature.
3. The optical fiber temperature sensor according to claim 1 , wherein at an LD case temperature between 10° C. and 50° C., a center wavelength of said semiconductor laser, λ C , is between 776 nm and 794 nm.
4. The optical fiber temperature sensor according to claim 1 , wherein a heater for temperature control is provided at said light source.
5. The optical fiber temperature sensor according to claim 1 , wherein an aspheric lens is provided between said light source and said optical fiber.
6. An optical fiber temperature sensor comprising:
a sensing part composed of an optical fiber arranged at a temperature measurement point;
a wavelength filter module for branching a Raman scattered light from a back scattered light generated at said sensing part;
a photoelectric detector for detecting said Raman scattered light; and
a signal processing circuit for processing an electric signal from the photoelectric detector, wherein
the light source is a semiconductor laser having a wavelength of 0.78 μm;
said wavelength filter module is composed of a longer wavelength side band pass filter for transmitting a Stokes light and a shorter wavelength side band pass filter for transmitting an anti-Stokes light; and
the longer wavelength side band pass filter and the shorter wavelength side band pass filter do not allow the light having the wavelength band of said semiconductor laser to be transmitted,
a center wavelength of the pass band of said longer wavelength side band pass filter is shifted from the wavelength of the Stokes light toward the longer wavelength side;
a center wavelength of the pass band of said shorter wavelength side band pass filter is shifted from the wavelength of the anti-Stokes light toward the shorter wavelength side; and,
at a case temperature of said semiconductor laser between 10° C. and 50° C., supposing that λ C , is a center wavelength of said semiconductor laser,
the longer wavelength side band pass filter is set up so that a minimum transmission wavelength of the pass band may be at least ((λ C −785)+802 nm) and its maximum transmission wavelength may be at least ((λ C −785)+821 nm), and that a cut-off characteristic for a wavelength of the light source is at least 4.5 db/nm; and
the shorter wavelength side band pass filter is set up so that a minimum transmission wavelength of the pass band may be at least ((λ C −785)+751 nm), and its maximum transmission wavelength may be at least ((λ C −785)+768 nm), and that a cut-off characteristic for a wavelength of the light source is at least 4.5 dB/nm.