Semiconductor integrated circuit device, production and operation method thereof
View Patent ↗A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an insulator film. Auxiliary gates coupled to selected memory cells function to generate hot electrons and are alternately arranged with other auxiliary gates functioning to prevent write errors in the non-selected memory cells.
1. A semiconductor integrated circuit device with a non-volatile memory including memory cells, comprising:
a semiconductor substrate,
at least one floating gate formed over the semiconductor substrate,
at least one control gate extending in a first direction, in a plan view of a principal surface of the semiconductor substrate, and formed over the floating gate, and
at least one bit line extending in a second direction, in the plan view, that crosses the first direction,
wherein each memory cell of the non-volatile memory comprises a floating gate and a control gate and is coupled to a bit line,
wherein an upper surface of a middle part of the floating gate is at a lower height than that of both opposing end sides of the floating gate, in a sectional view thereof extended in the first direction,
wherein the floating gate is comprised of a first portion, a second portion and third portion, which together define the shape of the floating gate,
wherein the first portion is located between the second portion and the semiconductor substrate,
wherein the second portion and the third portion are located on the first portion, and
wherein the second portion and the third portion exist in an extent of and limited by a width of the first portion in the first direction.
2. The semiconductor integrated circuit device with a non-volatile memory according to claim 1 ,
wherein the second portion and the third portion are not extended in the first direction.
3. The semiconductor integrated circuit device with a non-volatile memory according to claim 1 ,
wherein the shape of the floating gate is a U-shape in the sectional view thereof extended in the first direction.
4. The semiconductor integrated circuit device with a non-volatile memory according to claim 1 ,
wherein a part of the control gate is located in a spacing between the second portion and the third portion.
5. The semiconductor integrated circuit device with a non-volatile memory according to claim 1 , further comprising:
a first memory cell, a second memory cell and a third memory cell and with the first memory cell provided in between the second and third memory cells, in the first direction,
wherein a distance between the floating gate of the first memory cell and the floating gate of the second memory cell is equal to that between the floating gate of the first memory cell and the floating gate of the third memory cell.
6. The semiconductor integrated circuit device with a non-volatile memory according to claim 1 ,
wherein the second portion and the third portion have a width extending in the second direction limited to and defined by a width of the first portion of the floating gate extending in the second direction, respectively.
7. The semiconductor integrated circuit device with a non-volatile memory according to claim 6 ,
a first memory cell, a second memory cell and a third memory cell and with the first memory cell provided in between the second and third memory cells, in the first direction,
wherein a distance between the floating gate of the first memory cell and the floating gate of the second memory cell is equal to that between the floating gate of the first memory cell and the floating gate of the third memory cell.
8. The semiconductor integrated circuit device with a non-volatile memory according to claim 5 ,
wherein a part of the control gate is located in a spacing between the second portion and the third portion.