Light emitting device having vertical structure, package thereof and method for manufacturing the same
A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure over a substrate, forming a first electrode on the semiconductor layer, separating the substrate including the grown semiconductor layer into unit devices, bonding each of the separated unit devices on a sub-mount, separating the substrate from the semiconductor layer, and forming a second electrode on a surface of the semiconductor layer exposed in accordance with the separation of the substrate.
1. A light emitting device package comprising:
a sub-mount having a first surface and a second surface;
a first-type electrode and a second-type electrode arranged on the first surface of the sub-mount;
a light emitting device arranged on the first surface of the sub-mount, the light emitting device comprising a first electrode electrically connected to the first-type electrode, a semiconductor layer arranged on the first electrode, and a second electrode electrically connected to the semiconductor layer and the second-type electrode, the semiconductor layer comprising a light extraction structure;
a zener diode arranged on the first surface of the sub-mount such that the zener diode is electrically connected to the first-type electrode and the second-type electrode, wherein the first-type electrode and the second-type electrode electrically connect the light emitting device and the zener diode, wherein the light emitting device and the zener diode are arranged on the same side of the sub-mount, and wherein the zener diode is arranged a distance apart from the light emitting device;
a phosphor layer arranged on the light emitting device;
an encapsulation arranged on the first surface of the sub-mount; and
a lens arranged on the encapsulation.
2. The package according to claim 1 , further comprising a passivation layer arranged on at least one surface of the semiconductor layer.
3. The package according to claim 1 , wherein the sub-mount comprises Si, AlN ceramic, AlO x , Al 2 O 3 , or BeO, or a PCB.
4. The package according to claim 1 , wherein the sub-mount comprises one of a planar sub-mount, a 3D sub-mount, and a 3D through hole interconnection (THI) sub-mount.
5. The package according to claim 1 , wherein the light extraction structure comprises at least one of an irregularity pattern, a photonic crystal or a plurality of nano particles.
6. The package according to claim 1 , further comprising a metal pad arranged on the second electrode.
7. The package according to claim 1 , wherein the light extraction structure is an integral part of the semiconductor layer.
8. The package according to claim 7 , wherein the light extraction structure is arranged at a light emission surface of the light emitting device.
9. The package according to claim 1 , wherein the first electrode comprises at least two metals, or has a multilayer structure of at least two metal layers alternately arranged.
10. The package according to claim 1 , wherein the phosphor layer is arranged between the light emitting device and the encapsulation.
11. The package according to claim 1 , wherein the zener diode is arranged higher than the light emitting device.
12. The package according to claim 1 , wherein the thickness of the zener diode is different from that of the light emitting device.
13. The package according to claim 1 , wherein the first-type electrode and the second-type electrode directly contact the first surface of the sub-mount.
14. The package according to claim 1 , wherein the zener diode is arranged a distance apart from the center of the first surface of the sub-mount.
15. The package according to claim 1 , wherein the light emitting device is on the center of the first surface of the sub-mount.
16. The package according to claim 1 , wherein the phosphor layer comprises a yellow phosphor material.
17. The package according to claim 1 , further comprising a substrate between the first electrode and the first-type electrode.
18. The package according to claim 17 , wherein the substrate comprises
an anti-diffusion layer.
19. The package according to claim 17 , wherein the substrate comprises a metal plate.
20. The package according to claim 19 , wherein the metal plate comprises at least one of Cu, Ni, and Au, or an alloy thereof.
21. The package according to claim 17 , further comprising an adhesion layer between the semiconductor layer and the substrate.
22. The package according to claim 21 , wherein the adhesion layer has a double-layer structure.
23. The package according to claim 21 , wherein the adhesion layer has a thickness corresponding to 2 to 10 times the thickness of the first electrode.
24. The package according to claim 17 , wherein the substrate comprises a metal or a semiconductor.