Semiconductor device and manufacturing method thereof
View Patent ↗In a MIS transistor of which gate length is 10 nm or less, a gate insulator comprising a silicon oxide film formed on a silicon substrate and a high-k film formed on the silicon oxide film has a nitrided region including more nitrogen at the lateral side than at the central side in the gate-length direction, and including more nitrogen at the upper side than at the lower side in the film thickness direction. The reliability and characteristics of a MIS transistor using a gate insulator including a high-k (high dielectric constant) film is enhanced.
1. A manufacturing method of a semiconductor device comprising:
(a) a step of forming a silicon oxide film on a silicon substrate, and forming a high-k film on the silicon oxide film;
(b) a step of forming a gate electrode on the high-k film;
(c) a step of etching the gate electrode selectively, with exposing the high-k film in a region other than the lower portion of the gate electrode;
(d) after the step (c), a step of nitridation from the surface of the exposed high-k film so that nitrogen is included in the high-k film beneath the gate electrode; and
(e) after the step (d), a step of etching the silicon oxide film and exposed high-k film to form a gate insulator,
wherein the gate insulator includes more nitrogen at the peripheral side than at the central side of the gate electrode in the gate-length direction of the gate electrode, and includes more nitrogen at the gate electrode side than at the silicon substrate side in the film thickness direction of the gate insulator.
2. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the nitridation process at the step (d) is an annealing process in an atmosphere containing N 2 , NO, N 2 O or NH 3 .
3. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the nitridation process at the step (d) is a plasma nitridation process.
4. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the nitridation process at the step (d) is a plasma nitridation process executed without moving a sample after etching of the gate electrode at the step (c).
5. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the surface of the silicon substrate beneath the silicon oxide film is not nitrided at the step (d).
6. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the high-k film including an oxide of a rare earth element is formed at the step (a).
7. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the high-k film including a hafnium oxide is formed at the step (a).
8. The manufacturing method of a semiconductor device according to claim 1 ,
wherein etching of the high-k film at the step (e) is wet etching.
9. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the step (c) comprises etching of the conductive film so that the gate length of the gate electrode is 10 nm or less.
10. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the gate electrode is formed by a metal silicide formed by reaction between a polycrystalline film or a amorphous silicon film and a metal film formed on the conductive film.