Patent Assignment
Reel/Frame 024982/0148
Merger
Recorded: 2010-09-10
Received: 2010-09-15
Pages: 44
Assignor
RENESAS TECHNOLOGY CORP.
Executed: 2010-04-13
Assignee
RENESAS ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI-SHI, KANAGAWA, JPX, JAPAN
Covered Properties
(31)
A Metal Insulator Semiconductor Transistor Using a Gate Insulator Including a High Dielectric Constant Film
Application:
12/320,988 →
Semiconductor Device and Manufacturing Method of the Same
Application:
12/219,897 →
Semiconductor Memory Device and Semiconductor Device
Application:
11/826,751 →
Memory Card
Application:
29/274,768 →
Memory Card
Application:
29/286,731 →
Method of Fabricating a Semiconductor Integrated Circuit That Includes Patterning a Semiconductor Substrate with a First Photomask That Uses Metal for Blocking Light and Patterning the Same Substrate with a Second Photomask That Uses Organic Resin for Blocking Ligh
Application:
11/714,837 →
Method and System of Defect Inspection for Mask Blank and Method of Manufacturing Semiconductor Device Using the Same
Application:
11/707,127 →
Semiconductor Device and Manufacturing Method Thereof
Application:
11/702,104 →
Semiconductor Device
Application:
11/602,342 →
Manufacturing Method of Semiconductor Device
Application:
11/540,506 →
Semiconductor Device and Manufacturing Method of the Same
Application:
11/515,797 →
Semiconductor Memory Device and Semiconductor Device
Application:
11/391,226 →
Memory Card
Application:
29/242,997 →
Memory Card
Application:
29/242,995 →
Memory Card
Application:
29/242,996 →
Semiconductor Device and Manufacturing Method Thereof
Application:
11/180,657 →
Semiconductor Device Having Misfet Gate Electrodes with and Without Ge or Impurity and Manufacturing Method Thereof
Application:
11/132,373 →
Semiconductor Device and Manufacturing Method Thereof
Application:
11/114,195 →
Data Processing System Having a Data Transfer Unit for Converting an Integer into a Floating-Point Number When Tranferring Data from a Peripheral Circuit to a Memory
Application:
11/037,092 →
Method of Fabricating a Semiconductor Integrated Circuit That Includes Patterning a Semiconductor Substrate with a First Photomask That Uses Metal for Blocking Light and Patterning the Same Substrate with a Second Photomask That Uses Organic Resin for Blocking Ligh
Application:
11/022,758 →
Semiconductor Device and Method of Manufacturing Thereof
Application:
10/775,236 →
Semiconductor Device
Application:
10/742,888 →
Method of Forming Conductive Layers in the Trenches or Through Holes Made in an Insulating Film on a Semiconductor Substrate
Application:
10/367,737 →
Method of Fabricating Semiconductor Integrated Circuit Device and Method of Producing a Multi-Chip Module That Includes Patterning with a Photomask That Uses Metal for Blocking Exposure Light and a Photomask That Uses Organic Resin for Blocking Exposure Light
Application:
10/296,495 →
Ferroelectric Memory Device
Application:
10/300,839 →
Semiconductor Device and Method of Manufacturing Thereof
Application:
10/288,448 →
Semiconductor Device
Application:
10/046,261 →
Method of Manufacturing a Photomask
Application:
09/953,962 →
Method of Manufacturing a Photomask
Application:
09/954,065 →
Method of Manufacturing a Photomask
Application:
09/924,769 →
Semiconductor Device and Process for Production Thereof
Application:
09/881,716 →