Method and system of defect inspection for mask blank and method of manufacturing semiconductor device using the same
View Patent ↗Defect detection is performed with two settings, that is, setting of a focus position where a signal intensity obtained from a dot pattern is maximum and setting of a focus position where a signal intensity obtained from a hole pattern is maximum. In addition, defect detection is performed at a predetermined focus position previously set and for the detected defect, the focus position is changed at that position to find a focus position where the signal intensity is maximum. If the focus position is away from a signal light-receiving system, the defect is determined as dot-shaped. If the focus position is close to the signal light-receiving system, the defect is determined as hole-shaped. If the focus position is intermediate of them, the defect is determined as an elongated-shaped.
1. A method for mask blank defect inspection comprising:
a first step including: radiation on a first mask blank having formed thereon a dot pattern serving as a reference with extreme ultraviolet light; and obtainment of a first focus position where a signal intensity of a first darkfield detection image produced by the scatter-reflected light is maximum;
a second step including: radiation at the first focus position on a second mask blank, which is an inspection target with extreme ultraviolet light; scanning on the second mask blank in a direction perpendicular to an optical axis of the scatter-reflected light; and detection of a signal intensity of a second darkfield detection image produced by the scatter-reflected light;
a third step including detection of a defect in the second mask blank based on the signal intensity of the second darkfield detection image;
a fourth step including: radiation on a surface of a glass substrate, which is a base of the second mask blank with any one or all of visible light, ultraviolet light, and far-ultraviolet light; detection of a defect on the glass substrate by using reflected light; and extraction of a glass substrate which has a value of defects equal to or smaller than a specified value;
a fifth step including: formation of the second mask blank by making a multilayer adhere to the glass substrate which has a value of defects equal to or smaller than the specified value
a sixth step including: radiation on a fourth mask blank having formed thereon a line pattern serving as a reference with extreme ultraviolet light; and obtainment of a third focus position where a signal intensity of a fifth darkfield detection image produced by the scatter-reflected light is maximum;
a seventh step including: radiation at the third focus position on the second mask blank, which is an inspection target with extreme ultraviolet light; scanning on the second mask blank in a direction perpendicular to an optical axis of the scatter-reflected light; and detection of a signal intensity of a sixth darkfield detection image produced by the scatter-reflected light;
an eighth step including detection of a defect position in the second mask blank based on the signal intensity of the sixth darkfield detection image;
a ninth step including: radiation on the second mask blank with extreme ultraviolet light while changing the focus position at the defect position; and detection of a signal intensity of a seventh darkfield detection image produced by the scatter-reflected light;
a tenth step of obtaining a fourth focus position where a signal intensity of the seventh darkfield detection image is maximum;
an eleventh step of determining a type of the defect in the second mask blank based on the third and fourth focus positions; and
a twelfth step of outputting to a user a determination of the type of defect that is detected.
2. The method for mask blank defect inspection according to claim 1 , wherein,
in the eleventh step, the defect is determined as a dot-shaped defect when the fourth focus position is away from a signal light-receiving system compared to the third focus position, the defect is determined as a hole-shaped defect when the fourth focus position is closer thereto, and the defect is determined as a line-shaped defect when the fourth focus position is closer to the third focus position.