Metal insulator semiconductor transistor using a gate insulator including a high dielectric constant film
View Patent ↗In a MIS transistor of which gate length is 10 nm or less, a gate insulator comprising a silicon oxide film formed on a silicon substrate and a high-k film formed on the silicon oxide film has a nitrided region including more nitrogen at the lateral side than at the central side in the gate-length direction, and including more nitrogen at the upper side than at the lower side in the film thickness direction. The reliability and characteristics of a MIS transistor using a gate insulator including a high-k (high dielectric constant) film is enhanced.
1. A semiconductor device comprising:
a silicon substrate,
a gate insulator including a high-k film formed on the silicon substrate, and
a MIS transistor having a gate electrode formed on the gate insulator,
wherein the gate insulator includes more nitrogen at the peripheral side than at the central side of the gate electrode in the gate-length direction of the gate electrode, and includes more nitrogen at the gate electrode side than at the silicon substrate side in the film thickness direction of the gate insulator.
2. The semiconductor device according to claim 1 ,
wherein the silicon substrate side of the gate insulator has a region not including nitrogen.
3. The semiconductor device according to claim 1 ,
wherein the high-k film contains an oxide of a rare earth element.
4. The semiconductor device according to claim 1 ,
wherein the high-k film includes a hafnium oxide.
5. The semiconductor device according to claim 1 ,
wherein the gate length of the gate electrode is 10 nm or less.
6. The semiconductor device according to claim 1 ,
wherein the gate electrode is formed by a metal silicide or a metal.
7. The semiconductor device according to claim 1 ,
wherein the silicon substrate has an SOI layer, and
the channel of the MIS transistor is formed in the SOI layer.
8. A semiconductor device comprising:
a silicon substrate having a supporting substrate, buried oxide layer, and an SOI layer of a Fin structure,
a gate insulator including a silicon oxide film formed on the SOI layer and a high-k film formed on the silicon oxide film, and
a FinFET having a gate electrode formed on the gate insulator,
wherein the gate insulator includes more nitrogen at the peripheral side than at the central side of the gate electrode in the gate-length direction of the gate electrode, and contains more nitrogen at the gate electrode side than at the SOI layer side in the film thickness direction of the gate insulator.