Passivation film of semiconductor device
View Patent ↗Disclosed are a method of manufacturing a semiconductor device and a structure of a semiconductor device. A method of forming a passivation film of a semiconductor device comprises the steps of forming metal wires on a semiconductor substrate, forming a buffer oxide film being a first passivation film on the metal wires, wherein the buffer oxide film can mitigate damage by plasma, forming a high density plasma film being a second passivation film on the buffer oxide film, and forming a third passivation film on the second passivation film. According to the present invention, it is possible to significantly reduce the leakage current between a select source line and a common source line.
1. A structure of a passivation film of a semiconductor device, comprising:
a buffer oxide film formed on a semiconductor substrate in which metal wires are formed along steps formed by the metal wires, wherein the buffer oxide film mitigates damage by plasma;
a high density plasma (HDP) film formed on the buffer oxide film in a thickness sufficient to fill gaps between the metal wires; and
a nitride film formed on the HDP film, wherein the nitride film prevents moisture from infiltrating from the outside, wherein the structure of the passivation film has a three-layered structure comprising the buffer oxide film, the HDP film, and the nitride film.
2. The structure of claim 1 , wherein the buffer oxide film has a thickness of 50 Å to 2000 Å.
3. The structure of claim 1 , wherein the HDP film is sufficiently thick to completely bury the gaps between the metal wires.
4. The structure of claim 1 , wherein the HDP film has a thickness of 3000 Å to 15000 Å.
5. The structure of claim 1 , wherein the nitride film has a thickness of 2000 Å to 10000 Å.