III-nitride semiconductor device
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
1. A power semiconductor device, comprising:
a gate insulation body formed over an active heterojunction;
a barrier body formed over said gate insulation body;
a gate electrode formed over said barrier body;
wherein said active heterojunction is coupled to a first electrode and a second electrode;
a field insulation body is disposed between said first electrode and said gate electrode;
a portion of said field insulation body resides below said gate electrode; and
a second barrier body is disposed under a portion of said first electrode and over a portion of said field insulation body.
2. The device of claim 1 , wherein said barrier body comprises TiN.
3. The device of claim 1 , wherein said barrier body comprises Ta, W, Si, Mo, Cr, Co, or Pd.
4. The device of claim 1 , wherein said gate insulation body comprises silicon dioxide.
5. The device of claim 1 , wherein said gate insulation body comprises silicon nitride.
6. The device of claim 1 , wherein said field insulation body is disposed between said second electrode and said gate electrode.
7. The device of claim 1 , wherein said field insulation body comprises silicon dioxide.
8. The device of claim 1 , wherein said barrier body extends from said gate insulation body over said portion of said field insulation body.
9. The device of claim 1 , wherein said active heterojunction includes a III-nitride channel layer, and a III-nitride barrier layer formed over said III-nitride channel layer.
10. The device of claim 9 , wherein said III-nitride channel layer comprises GaN, and said III-nitride barrier layer comprises AlGaN.
11. The device of claim 1 , wherein said gate electrode comprises a metal.
12. The device of claim 1 , wherein said gate electrode comprises a material from a group of materials consisting of: N+GaN, Si, Ge, P+GaN, and a N+GaN alloy.
13. The device of claim 1 , wherein said barrier body comprises an alloy selected from the group of alloys consisting of: TiSiN, TaN, TaSiN, WN, WSiN, and WBN.
14. The device of claim 1 , wherein said field insulation body is thicker than said gate insulation body.
15. The device of claim 1 , wherein said field insulation body comprises silicon nitride.
16. A power semiconductor device, comprising:
a III-nitride active heterojunction comprising a III-nitride transition layer and a III -nitride buffer layer;
an insulation body formed over said III-nitride active heterojunction;
a barrier body formed over said insulation body;
a gate electrode formed over said barrier body;
a field insulation body disposed between a first electrode and said gate electrode;
wherein said active heterojunction is coupled to a first electrode and a second electrode;
wherein a portion of said field insulation body resides below said gate electrode; and
wherein a second barrier body is disposed under a portion of said first electrode and over a portion of said field insulation body.
17. The power semiconductor device of claim 16 , wherein said field insulation body is disposed between said gate electrode and said second electrode.
18. The power semiconductor device of claim 16 , wherein said field insulation body comprises silicon dioxide.
19. The power semiconductor device of claim 16 , wherein said field insulation body comprises silicon nitride.
20. The power semiconductor device of claim 16 , wherein said insulation body comprises silicon dioxide.
21. The power semiconductor device of claim 16 , wherein said insulation body comprises silicon nitride.
22. The power semiconductor device of claim 16 , wherein said barrier body comprises an alloy selected from the group of alloys consisting of: TiSiN, TaN, TaSiN, WN, WSiN, and WBN.
23. The power semiconductor device of claim 16 , wherein said gate electrode comprises a material from a group of materials consisting of: N+GaN, Si, Ge, P+GaN, and a N+GaN alloy.