Semiconductor device and method for manufacturing same
View Patent ↗An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.
1. A semiconductor device, comprising:
a semiconductor substrate;
an insulating film formed on or over said semiconductor substrate;
a barrier metal film, formed on said insulating film; and
an electrically conducting film formed on said barrier metal film so as to be in contact with said barrier metal film, and containing copper, a metal having a standard electrode potential that is lower than that of copper, and carbon,
wherein a distribution of carbon concentration along a depositing direction in said electrically conducting film includes a first peak and a second peak, and
wherein said metal having a standard electrode potential that is lower than that of copper is contained in an interface between said electrically conducting film and said barrier metal film at higher concentration than in other regions.
2. The semiconductor device according to claim 1 , wherein said metal having a standard electrode potential that is lower than that of copper is selected from a group consisting of aluminum (Al), tin (Sn) and titanium (Ti).
3. The semiconductor device according to claim 1 ,
wherein said barrier metal film is formed on a bottom surface and a side surface of a concave portion formed in said insulating film,
wherein said electrically conducting film is formed to fill said concave portion,
wherein said first peak and said second peak appears in this order from the interface between said barrier metal film and said electrically conducting film, and
wherein said first peak exists at a position of a height equal to or more than 50 nm to equal to or less than 100 nm from said interface.
4. The semiconductor device according to claim 2 ,
wherein said barrier metal film is formed on a bottom surface and a side surface of a concave portion formed in said insulating film,
wherein said electrically conducting film is formed to fill said concave portion,
wherein said first peak and said second peak appears in this order from the interface between said barrier metal film and said electrically conducting film, and
wherein said first peak exists at a position of a height equal to or more than 50 nm to equal to or less than 100 nm from said interface.
5. The semiconductor device according to claim 1 ,
wherein said barrier metal film is formed on a bottom surface and a side surface of a concave portion formed in said insulating film,
wherein said electrically conducting film is formed to fill said concave portion,
wherein said first peak and said second peak appears in this order from a bottom surface of said concave portion, and
wherein said second peak appears at a position of a height equal to or more than 0.75 h to equal to or less than 0.9 h from said interface between said barrier metal film and said electrically conducting film, provided that h is a depth of said concave portion.
6. The semiconductor device according to claim 2 ,
wherein said barrier metal film is formed on a bottom surface and a side surface of a concave portion formed in said insulating film,
wherein said electrically conducting film is formed to fill said concave portion,
wherein said first peak and said second peak appears in this order from a bottom surface of said concave portion, and
wherein said second peak appears at a position of a height equal to or more than 0.75 h to equal to or less than 0.9 h from said interface between said barrier metal film and said electrically conducting film, provided that h is a depth of said concave portion.