Method for the removal of airborne molecular contaminants using extra clean dry air
The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is, continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.
1 . A method for the removal of airborne molecular contaminants (AMC) from a AMC contaminated substrate, comprising:
contacting at least a portion of the AMC contaminated substrate with a purified purge gas consisting essentially of extra clean dry air, at a temperature of about 20° C. to about 100° C.;
producing a contaminated purge gas by transferring the AMC from the substrate into the purified purge gas, the contaminated purge gas including the AMC from the substrate; and
removing the contaminated purge gas from the substrate; thereby removing the AMC from the substrate.
2 . The method of claim 1 wherein the substrate includes a wafer.
3 . The method of claim 1 wherein the substrate includes a wafer chamber.
4 . The method of claim 1 wherein the portion of the substrate and the purified purge gas are contacted at a temperature of about 20° C. to about 50° C.
5 . The method of claim 1 wherein the steps are repeated until the contaminated purge gas has an AMC concentration below about 1 ppb AMC on a volume basis.
6 . The method of claim 1 wherein the substrate is enclosed within a chamber.
7 . The method of claim 1 wherein the substrate includes at least one silicon substrate.
8 . The method of claim 1 further comprising purging the substrate with an inert gas after removing the contaminated purge gas from the substrate.
9 . The method of claim 8 wherein the inert gas is selected from the group consisting of nitrogen, argon, noble gases, methane and combinations thereof.
10 . The method of claim 1 wherein the purified purge gas is inert with respect to the AMC.
11 . A method for the removal of airborne molecular contaminants (AMC) from an AMC contaminated substrate comprising:
contacting a purified purge gas consisting essentially of extra clean dry air (XCDA) with at least a portion of the AMC contaminated substrate;
producing a contaminated purge gas by transferring the AMC from the substrate into the purified purge gas, the contaminated purge gas including the AMC from the substrate; and
removing the contaminated purge gas from the substrate; thereby removing AMC from the substrate.
12 . The method of claim 11 further including the step of contacting at least a portion of the substrate with the purified purge gas at a temperature that does not change or chemically alter the AMC.
13 . The method of claim 11 wherein the substrate includes a wafer.
14 . A method for the removal of airborne molecular contaminants (AMC) from an AMC contaminated wafer comprising:
providing a purified purge gas, wherein the purified purge gas consists essentially of extra clean dry air (XCDA);
contacting at least a portion of the AMC contaminated wafer with the purified purge gas;
producing a contaminated purge gas by transferring AMC from the wafer into the purified purge gas, the contaminated purge gas including AMC from the wafer; and
removing the contaminated purge gas from the wafer; thereby removing AMC from the wafer.
15 . The method of claim 14 wherein the portion of the substrate and the purified purge gas are contacted at a temperature of about 20° C. to about 50° C.
16 . The method of claim 14 wherein the portion of the substrate and the purified purge gas are contacted at a temperature of 80° C. to 100° C.
17 . The method of claim 14 wherein the portion of the substrate and the purified purge gas are contacted under temperature conditions that do not chemically alter the AMC.
18 . A method for the removal of airborne molecular contaminants (AMC) from an AMC contaminated wafer processing or wafer storage chamber comprising:
providing a purified purge gas, wherein the purified purge gas consists essentially of extra clean dry air (XCDA);
contacting at least a portion of the wafer processing or wafer storage chamber with the purified purge gas;
producing a contaminated purge gas by transferring AMC from the AMC contaminated wafer processing or wafer storage chamber into the purified purge gas, the contaminated purge gas including AMC from the wafer processing or wafer storage chamber; and
removing the contaminated purge gas from the wafer processing or wafer storage chamber; thereby removing AMC from the wafer processing or wafer storage chamber.
19 . The method of claim 18 wherein contacting at least a portion of the AMC contaminated wafer with the purified purge gas includes contacting the portion of the wafer with the purified purge gas at a temperature of about 20° C. to 100° C.
20 . The method of claim 18 wherein contacting at least a portion of the AMC contaminated wafer processing or wafer storage chamber with the purified purge gas includes contacting the portion of the wafer processing or wafer storage chamber with the purified purge gas at a temperature of about 20° C. to 100° C.
21 . The method of claim 18 wherein the portion of the substrate and the purified purge gas are contacted under temperature conditions that do not chemically alter the AMC.