Light emitting device having vertical structure and method for manufacturing the same
A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.
1. A light emitting device having a vertical structure, comprising:
a semiconductor structure having a first surface and a second surface, the semiconductor structure having inclined surfaces, and the semiconductor structure comprising a p type semiconductor layer, an active layer arranged on the p type semiconductor layer, and an n type semiconductor layer arranged on the active layer;
a first electrode arranged on the first surface of the semiconductor structure;
a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor structure; and
a second electrode arranged on the TCO layer.
2. The light emitting device according to claim 1 , further comprising:
a current diffusion layer arranged between the semiconductor structure and the first electrode.
3. The light emitting device according to claim 2 , wherein the current diffusion layer comprises an In x Ga 1-x N layer or an In x Ga 1-x N/GaN superlattice layer.
4. The light emitting device according to claim 1 , wherein the first electrode comprises a reflection electrode.
5. The light emitting device according to claim 1 , further comprising a support layer arranged under the first electrode, the support layer comprising metal or semiconductor containing Si.
6. The light emitting device according to claim 1 , wherein the semiconductor structure has an inclined side surface.
7. The light emitting device according to claim 1 , wherein the TCO layer comprises a conductive material having a refractive index higher than the refractive index of GaN.
8. The light emitting device according to claim 1 , wherein the TCO layer comprises one or more of indium tin oxide (ITO), ZnO, AlZnO, and InZnO.
9. The light emitting device according to claim 1 , further comprising a getter metal layer arranged between the semiconductor structure and the TCO layer.
10. The light emitting device according to claim 9 , wherein the getter metal layer comprises at least one of Ti, Zr, and Cr.
11. A light emitting device having a vertical structure, comprising:
a first electrode;
a semiconductor structure arranged on the first electrode;
a metal layer having a reactivity to at least one of elements forming the semiconductor structure;
a transparent conductive oxide (TCO) layer arranged on the metal layer; and
a second electrode arranged on the TCO layer.
12. The light emitting device according to claim 11 , wherein the first electrode comprises:
a reflection electrode; and
an ohmic electrode arranged between the reflection electrode and the semiconductor structure.
13. The light emitting device according to claim 11 , wherein the metal layer comprises at least one of Ti, Zr, and Cr.
14. The light emitting device according to claim 11 , wherein the first electrode is formed on a support layer comprising metal or semiconductor containing Si.