Method for fabricating a metal-insulator-metal capacitor
View Patent ↗A method fabricating multiple wiring metals in a semiconductor device. The method includes forming a lower wiring metal on a semiconductor substrate, forming an interlayer dielectric on the lower wiring metal, and selectively removing the interlayer dielectric to form a contact dielectric film, a body dielectric film and an opening between the contact and body dielectric films. The method also includes filling the opening with low-k material, forming a capping dielectric on the contact and body dielectric films and the low-k material, forming a contact hole passing through the capping dielectric and the contact dielectric film to be connected to the lower wiring metal, and forming an upper wiring metal electrically interconnected to the lower wiring metal through the contact hole.
1. A multiple wiring metal structure comprising:
a lower wiring metal formed on a semiconductor substrate;
a contact dielectric film and a body dielectric film formed on the lower wiring metal;
a low-k dielectric adapted to fill an opening between the contact and body dielectric films;
a capping dielectric formed on the contact and body dielectric films; and
an upper wiring metal connected to the lower wiring metal by a contact plug.
2. The structure of claim 1 , wherein the low-k dielectric is at least one of carbonate silicate glass (CSG), alpha-fluorinated amorphous carbon (α-FC), and hydrogen silsesquioxane (HSQ).
3. The structure of claim 1 , wherein said contact plug is an electrically conductive material.
4. The structure of claim 3 , wherein said contact plug is tungsten.
5. The structure of claim 1 , wherein both, said contact dielectric and said capping dielectric, define an opening, said opening adapted to receive said contact plug therein.
6. The structure of claim 1 , wherein a plurality of said body dielectric films are disposed in constant intervals on said lower wiring metal.
7. A multiple wiring metal structure comprising:
a lower wiring metal formed on a semiconductor substrate;
a plurality of contact dielectric film and a plurality of body dielectric film formed on said lower wiring metal;
a low-k dielectric adapted to be filled in a plurality of openings defined between each of said body dielectric films and between at least one of said body dielectric film and said contact dielectric film;
a capping dielectric formed on said contact and body dielectric films; and
an upper wiring metal connected to the lower wiring metal by a contact plug.
8. The structure according to claim 7 , wherein said contact plug is an electrically conductive material.
9. The structure according to claim 7 , wherein both, said contact dielectric and said capping dielectric, define an opening, said opening adapted to receive said contact plug therein.
10. The structure according to claim 7 , wherein said low-k dielectric is at least one of carbonate silicate glass (CSG), alpha-fluorinated amorphous carbon (.alpha.-FC), and hydrogen silsesquioxane (HSQ).
11. The structure according to claim 10 , wherein said low-k dielectric is enclosed between said dielectric layer and said capping dielectric.
12. The structure according to claim 7 , wherein each of said body dielectric films are located at constant intervals on said dielectric layer thereby compensating mechanical defects of the low-k dielectric.