Bragg mirror optimized for shear waves
View Patent ↗In an embodiment, set forth by way of example and not limitation, a Bragg mirror includes a first bi-layer of a first thickness and a second bi-layer of a second thickness which is different from the first thickness. In this exemplary embodiment, the first bi-layer consists essentially of a first high impedance layer and a first low impedance layer, and the second bi-layer of a second thickness which is different from the first thickness, the second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer. Preferably, the first bi-layer is configured to substantially reflect a first wavelength and the second bi-layer is configured to substantially reflect a second wavelength different from the first wavelength.
1. An integrated device comprising:
a device developing acoustical energy at multiple wavelengths, said device having a surface; and
an acoustical reflector acoustically coupled to said device, and operative to reflect at least a portion of said acoustical energy, said acoustical reflector having a first surface formed to reflect acoustical energy and having a second surface adjacent to said first surface, said second surface not optimized to reflect acoustical energy, said first surface adjacent to and connected to said surface of said device developing acoustical energy, said acoustical reflector including:
a first structure configured to reflect a first wavelength of said acoustical energy; and
a second structure configured to reflect a second wavelength of said acoustical energy which is different from said first wavelength.
2. An integrated device as recited in claim 1 wherein said device is a solidly mounted resonator.
3. An integrated device as recited in claim 1 wherein said device is a filter.
4. An integrated device as recited in claim 3 wherein said filter is a stack crystal filter.
5. An integrated device as recited in claim 3 wherein said filter is a coupled resonator filter.
6. An integrated device as recited in claim 1 wherein said first wavelength is the wavelength of a longitudinal wave developed by said device and wherein said second wavelength is the wavelength of a shear wave developed by said device.
7. An integrated device as recited in claim 6 wherein said first wavelength is approximately twice as long as said second wavelength.
8. An integrated device as recited in claim 1 further comprising a substrate, wherein said acoustical reflector is located between said substrate and said device.
9. An integrated device as recited in claim 8 wherein said substrate is acoustically isolated from said device.
10. An integrated device comprising:
An acoustical energy developing structure, said acoustical energy developing structure developing energy at multiple wavelengths, said acoustical energy developing structure having a surface;
an acoustical reflector acoustically coupled to said acoustical energy developing structure along said surface, said acoustical reflector operative to reflect at least a portion of acoustical energy incident upon a surface of said acoustical reflector, said surface of said reflector adjacent to and connected to said surface of said structure, said acoustical reflector including:
a first structure configured to reflect a first wavelength of said acoustical energy, and
a second structure configured to reflect a second wavelength of said acoustical energy which is different from said first wavelength;
and
a substrate supporting said acoustical reflector, said substrate separated from said acoustical energy developing structure by said acoustical reflector.
11. An integrated device as recited in claim 10 wherein said device is a solidly mounted resonator.
12. An integrated device as recited in claim 10 wherein said device is a filter.
13. An integrated device as recited in claim 12 wherein said filter is a stack crystal filter.
14. An integrated device as recited in claim 13 wherein said filter is a coupled resonator filter.
15. An integrated device as recited in claim 10 wherein said first wavelength is said wavelength of a longitudinal wave developed by said device and wherein said second wavelength is said wavelength of a shear wave developed by said device.
16. An integrated device as recited in claim 15 wherein said first wavelength is approximately twice as long as said second wavelength.
17. An integrated device as recited in claim 10 wherein said substrate is acoustically isolated from said device.
18. An integrated device comprising:
means for developing acoustical energy at multiple wavelengths, said means for developing having a surface;
an acoustical reflector acoustically coupled to said means for developing, said acoustical reflector operative to reflect at least a portion of acoustical energy incident upon a surface of said acoustical reflector, said surface of said acoustical reflector adjacent to and connected to said surface of said means for developing, said acoustical reflector including:
a first structure configured to reflect a first wavelength of said acoustical energy, and
a second structure configured to reflect a second wavelength of said acoustical energy which is different from said first wavelength;
and
a substrate supporting said acoustical reflector, said substrate separated from said means for developing by said acoustical reflector.
19. An integrated device as recited in claim 18 wherein said first wavelength is said wavelength of a longitudinal wave developed by said device and wherein said second wavelength is said wavelength of a shear wave developed by said device.
20. An integrated device as recited in claim 18 wherein said substrate is acoustically isolated from said device.