Photomask and exposure method
View Patent ↗A photomask is to be used for exposure of a semiconductor wafer with the dipole illumination light, and includes a main opening, a first assist opening, a second assist opening, a third assist opening and a fourth assist opening. Each of the assist openings is located so that the central point thereof is deviated from both of a first straight line parallel to a first direction and passing the central point of the main opening, and a second straight line parallel to a second direction and passing the central point of the main opening. Here, the first direction is the direction among in-plane directions of the photomask that is parallel to an alignment direction of an effective light source distribution of the dipole illumination light. Also, the second direction is the direction among in-plane directions of the photomask that is perpendicular to the alignment direction.
1. A photomask to be used for exposure of a semiconductor wafer with dipole illumination light, comprising:
a main opening provided so as to correspond to a predetermined pattern to be formed on said semiconductor wafer and to be transferred to said semiconductor wafer; and
a subresolution assist opening provided around said main opening;
wherein, when a direction among in-plane directions of said photomask that is parallel and vertical to an alignment direction of an effective light source distribution of said dipole illumination light is respectively defined as a first and a second direction, said assist opening is located so that a central point of said assist opening is deviated from both of a first straight line parallel to said first direction and passing a central point of said main opening and a second straight line parallel to said second direction and passing said central point of said main opening.
2. The photomask according to claim 1 ,
wherein, when a direction among said in-plane directions of said photomask that makes 45° and 135° with respect to said alignment direction of said effective light source distribution of said dipole illumination light is respectively defined as a third and a fourth direction, said assist opening is located on a third straight line parallel to said third direction and passing said central point of said main opening, or on a fourth straight line parallel to said fourth direction and passing said central point of said main opening.
3. The photomask according to claim 2 ,
wherein said assist opening includes a first and a second assist opening located on said third straight line so as to oppose each other across said central point of said main opening, and a third and a fourth assist opening located on said fourth straight line so as to oppose each other across said central point of said main opening.
4. The photomask according to claim 1 ,
wherein a plurality of said main openings and a plurality of said assist openings are provided;
said first straight line is a straight line parallel to said first direction and passing said central point of said main opening closest to each of said assist openings; and
said second straight line is a straight line parallel to said second direction and passing said central point of said main opening closest to each of said assist openings.
5. The photomask according to claim 2 ,
wherein a plurality of said main openings and a plurality of said assist openings are provided;
said first straight line is a straight line parallel to said first direction and passing said central point of said main opening closest to each of said assist openings;
said second straight line is a straight line parallel to said second direction and passing said central point of said main opening closest to each of said assist openings;
said third straight line is a straight line parallel to said third direction and passing said central point of said main opening closest to each of said assist openings; and
said fourth straight line is a straight line parallel to said fourth direction and passing said central point of said main opening closest to each of said assist openings.
6. A method of exposing a semiconductor wafer with dipole illumination light, comprising irradiating said semiconductor wafer with said dipole illumination light through said photomask according to claim 1 .