Method for temperature compensation in MEMS resonators with isolated regions of distinct material
View Patent ↗MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material. In a specific embodiment, the shape, dimensions, location and arrangement of a second material comprising silicon dioxide is tailored so that the resonator comprising a first material of SiGe will have a TCF of a much lower magnitude than that of either a homogeneous SiGe or homogeneous silicon dioxide resonator.
1. A MEMS device comprising:
a resonator coupled to an anchor, the resonator further comprising:
a first material; and
a second material to tune the temperature coefficient of frequency of the resonator, wherein the second material is confined to a region having a longest dimension that is shorter than the distance between the anchor and a point of the resonator furthest from the anchor.
2. The MEMS device of claim 1 , wherein the first material has a different Young's modulus temperature coefficient than the second material.
3. The MEMS device of claim 2 , wherein the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient.
4. The MEMS device of claim 2 , wherein the first material is a semiconductor and the second material is a dielectric.
5. The MEMS device of claim 4 , wherein the semiconductor comprises at least one of silicon and germanium and the dielectric comprises silicon dioxide.
6. The MEMS device of claim 1 , wherein the top surface of the second material is planar with the top surface of the first material.
7. The MEMS device of claim 1 , wherein the resonator is one of a cantilevered beam and a plate resonator.
8. The MEMS device of claim 1 , wherein the second material stiffens the resonator region to which it is confined as a function of temperature to tune the temperature coefficient of frequency of the resonator in a manner at least partially decoupled from the resonator temperature coefficient of expansion.
9. The MEMS device of claim 1 , wherein an edge of the second material farthest from the anchor is disposed a first distance from the anchor, the first distance being less than a distance between the anchor and a point of maximum displacement during resonance.
10. The MEMS device of claim 1 , wherein the first material covers substantially all of a top or bottom surface of the resonator.
11. The MEMS device of claim 1 , wherein the second material is contained within a trench in the first material.
12. The MEMS device of claim 1 , wherein the resonator is a beam and wherein the region to which the second material is confined includes a point of maximum flexural stress within the resonator when the resonator is made to resonate.
13. The MEMS device of claim 1 , wherein the resonator is a beam and wherein the region to which the second material is confined forms a sidewall of the beam.
14. The MEMS device of claim 1 , wherein the region to which the second material is confined includes a point of maximum stress within the resonator and excludes a point of maximum displacement when the resonator is made to resonate.
15. The MEMS device of claim 1 , wherein the resonator is a bulk mode resonator and wherein the region to which the second material is confined is an isolated block completely surrounded by the first material.
16. A MEMS resonator comprising:
a first material; and
a second material contained within a trench in the first material to tune the temperature coefficient of frequency of the resonator, wherein the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator during operation.
17. The MEMS resonator of claim 16 , wherein the second material has a different Young's modulus temperature coefficient than the first material.
18. The MEMS resonator of claim 16 , wherein the first material is a semiconductor comprising at least one of silicon and germanium and wherein the second material is a dielectric comprising silicon dioxide.
19. The MEMS resonator of claim 16 , wherein the resonator is a beam and wherein the stress is flexural.
20. The MEMS resonator of claim 16 , wherein the first material covers substantially all of a top or bottom surface of the resonator.
21. A MEMS device comprising:
a bulk-mode resonator coupled to an anchor, the bulk-mode resonator further comprising:
a first material and a second material, the second material contained within a plurality of trenches in the first material to tune the temperature coefficient of frequency of the bulk-mode resonator, wherein the plurality of trenches are arranged in a radial array about the anchor.
22. The MEMS device of claim 21 , wherein the first material has a different Young's modulus temperature coefficient than the second material.
23. The MEMS device of claim 21 , wherein the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient.
24. The MEMS device of claim 21 , wherein the top surface of the first material is planar with the top surface of the second material.