Fine treatment agent and fine treatment method using same

1. A fine treatment agent, which is used for the fine processing of a multilayer film including a tungsten containing film and a silicon compound containing film, comprising

hydrogen fluoride, nitric acid, at least one of ammonium fluoride or ammonium chloride, and 0.001 weight percent to 0.1 weight percent of a non-ionic surfactant,

wherein an etching rate for said tungsten containing film at 25° C. which is within a range from 0.5 nm/min to 5000 nm/min and an etching rate for said silicon compound containing film at 25° C. which is within a range from 0.5 times to 2 times the etching rate for said tungsten containing film at 25° C.,

wherein X, Y and Z satisfy the following relational expressions when the content of said hydrogen fluoride is X mol/kg the content of the nitric acid is Y mol/kg and the content of the at least one of ammonium fluoride or ammonium chloride is Z mol/kg,

[Formula 1]

Z≦ 1.25 Y− 1.75  (1)

Z> 1.4 Y− 3  (2)

Z≦− 0.973 Y+ 0.108×(100−4 X )  (3)

0.5≦X≦10, Y>0, 0<Z≦6  (4).

2. The fine treatment agent according to claim 1 , wherein a main component of said tungsten containing film is at least one type selected from the group consisting of tungsten, titanium tungsten, copper tungsten, nickel tungsten, cobalt tungsten, molybdenum tungsten, tungsten silicide and tungsten nitride.

3. The fine treatment agent according to claim 1 , wherein said silicon compound containing film is a single layer of one type selected from the group consisting of a silicon thermal oxide film, a non-doped silicate glass film, a phosphorous doped silicate glass film, a boron doped silicate glass film, a phosphorous and boron doped silicate glass film, a TEOS film, a fluorine containing silicon oxide film, a carbon containing silicon oxide film, a silicon nitride oxide film and a natural oxide film, or a multilayer film of two or more types selected from the group.

4. The fine treatment agent according to claim 1 , wherein the etching rate for said silicon compound containing film at 25° C. is within a range from 0.5 nm/min to 5000 nm/min.

5. A fine treatment agent, which is used for the fine processing of multilayer film including a tungsten containing film and silicon compound containing film comprising

hydrogen fluoride, nitric acid, at least one of ammonium fluoride or ammonium chloride, and 0.001 weight percent to 0.1 weight percent of a non-ionic surfactant,

wherein an etching rate for said tungsten containing film at 25° C. which is within a range from 0.5 nm/min to 5000 nm/min and an etching rate for said silicon compound containing film at 25° C. which is either less than 0.5 times or greater than 2 times the etching rate for said tungsten containing film at 25° C.,

wherein X, Y and Z satisfy the following relational expressions when the content of said hydrogen fluoride is X mol/kg, the content of the nitric acid is Y mol/kg and the content of the at least one of ammonium fluoride or ammonium chloride is Z mol/kg,

[Formula 2]

Z≦− 0.973 Y+ 0.108×(100−4 X )  (3)

0.5≦X≦10, Y>0, 0<Z≦6  (4)

Z≦ 1.4 Y− 3  (5).

6. The fine treatment agent according to claim 5 , wherein a main component of said tungsten containing film is at least one type selected from the group consisting of tungsten, titanium tungsten, copper tungsten, nickel tungsten, cobalt tungsten, molybdenum tungsten, tungsten silicide and tungsten nitride.

7. The fine treatment agent according to claim 5 , wherein said silicon compound containing film is a single layer of one type selected from the group consisting of a silicon thermal oxide film, a non-doped silicate glass film, a phosphorous doped silicate glass film, a boron doped silicate glass film, a phosphorous and boron doped silicate glass film, a TEOS film, a fluorine containing silicon oxide film, a carbon containing silicon oxide film, a silicon nitride oxide film and a natural oxide film, or a multilayer film of two or more types selected from the group.

8. The fine treatment agent according to claim 5 , wherein the etching rate for said silicon compound containing film at 25° C. is within a range from 0.5 nm/min to 5000 nm/min.

9. The fine treatment agent according to claim 5 , wherein containing 0.001 weight percent to 0.1 weight percent of a surfactant.

10. A fine treatment method comprising: providing the fine treatment agent according to claim 5 : and finely processing at least one of a tungsten containing film or a silicon compound containing film by using the fine treatment agent as an etchant.

11. A fine treatment method comprising: providing the line treatment agent according to claim 1 ; and finely processing at least one of a tungsten containing film or a silicon compound containing film, within a range from 5° C. to 50° C. by using the fine treatment agent as an etchant.

12. The fine treatment agent according to claim 1 , which contains metal elements in an amount of no more than 1 ppb.

13. The fine treatment method according to claim 11 , wherein both tungsten containing film and the silicon compound containing film are finely processed at the same time using as an etchant the fine treatment agent having an etching rate for the tungsten containing film at 25° C. which is within the range from 0.5 nm/min to 5000 mn/min and an etching rate for the silicon compound containing film at 25° C. which is within a range from 0.5 times to 2 times the etching rate for the tungsten containing film at 25° C.

14. The fine treatment method according to claim 11 , wherein one of the tungsten containing film or the silicon compound containing film is predominantly finely processed using as an etchant the fine treatment agent having an etching rate for the tungsten containing film at 25° C. which is within a range from 0.5 nm/min to 5000 nm/min and an etching rate for the silicon compound containing film at 25° C. which is less than 0.5 times or more than 2 times the etching rate for the tungsten containing film at 25° C.

15. The fine treatment method according to claim 11 , wherein the processing step is conducted at a temperature of 5° C. to 50° C.