Limiter circuit
View Patent ↗A limiter circuit includes a differential amplifier circuit having a non-inverting and an inverting inputs, the inverting input fed with an input signal to the limiter circuit, a driving circuit fed with an output of the differential amplifier, a MOS transistor having a source, a drain and a gate, one of the source and the drain of the MOS transistor connected to an output of the driving circuit, the other of the source and the drain of the MOS transistor connected to the non-inverting input of the differential amplifier, the gate of the MOS transistor applied with a predetermined voltage, and a load circuit connected to the other of the source and the drain of the MOS transistor.
1. A semiconductor apparatus comprising:
a limiter circuit comprising:
a differential amplifier circuit having a non-inverting and an inverting inputs, the inverting input fed with an input signal to the limiter circuit;
a driving circuit fed with an output of the differential amplifier;
a MOS transistor having a source, a drain and a gate, one of the source and the drain of the MOS transistor connected to an output of the driving circuit, the other of the source and the drain of the MOS transistor connected to the non-inverting input of the differential amplifier, the gate of the MOS transistor applied with a predetermined voltage; and
a load circuit connected to the other of the source and the drain of the MOS transistor,
a first voltage source being configured to supply a first operating voltage to a first operating circuit that outputs the input signal of the limiter circuit;
a second operating circuit fed with an output signal of the limiter circuit; and
a second voltage source being configured to supply a second operating voltage to the second operating circuit, the second operating voltage being lower than the first operating voltage,
wherein:
the MOS transistor is a depletion type MOS transistor such that the limiter circuit has an upper limit of an output voltage greater than the predetermined voltage.
2. The semiconductor apparatus according to claim 1 , further comprising an amplifier being disposed between the other of the source and the drain of the MOS transistor and the non-inverting input of the differential amplifier.
3. The semiconductor apparatus according to claim 1 , wherein the driving circuit is an Nch-MOS transistor.
4. The semiconductor apparatus according to claim 1 , wherein the driving circuit is a Pch-MOS transistor.
5. The semiconductor apparatus according to claim 1 , wherein the load circuit is a constant current source.
6. A semiconductor apparatus comprising:
a limiter circuit comprising:
a differential amplifier circuit having a non-inverting and an inverting inputs, the inverting input fed with an input signal to the limiter circuit;
a driving circuit fed with an output of the differential amplifier, an output of the driving circuit connected to the non-inverting input of the differential amplifier;
a MOS transistor having a source, a drain and a gate, one of the source and the drain of the MOS transistor connected to the output of the driving circuit, said one of the source and the drain of the MOS transistor connected to the non-inverting input of the differential amplifier, the gate of the MOS transistor applied with a predetermined voltage; and
a load circuit connected to the other of the source and the drain of the MOS transistor;
a first voltage source being configured to supply a first operating voltage to a first operating circuit that outputs the input signal of the limiter circuit;
a second operating circuit fed with an output signal of the limiter circuit; and
a second voltage source being configured to supply a second operating voltage to the second operating circuit, the second operating voltage being lower than the first operating voltage,
wherein the gate of the MOS transistor is connected to the second voltage source.
7. The semiconductor apparatus according to claim 6 , wherein the MOS transistor is a depletion type MOS transistor.
8. The semiconductor apparatus according to claim 6 , further comprising an amplifier being disposed between the one of the source and the drain of the MOS transistor and the non-inverting input of the differential amplifier.
9. The semiconductor apparatus according to claim 6 , wherein the driving circuit is an Nch-MOS transistor.
10. The semiconductor apparatus according to claim 6 , wherein the driving circuit is a Pch-MOS transistor.
11. The semiconductor apparatus according to claim 6 , wherein the load circuit is a constant current source.
12. A semiconductor apparatus comprising:
a limiter circuit comprising:
a differential amplifier circuit having a non-inverting and an inverting inputs, the inverting input fed with an input signal to the limiter circuit;
a driving circuit fed with an output of the differential amplifier;
a MOS transistor having a source, a drain and a gate, one of the source and the drain of the MOS transistor connected to an output of the driving circuit, the other of the source and the drain of the MOS transistor connected to the non-inverting input of the differential amplifier, the gate of the MOS transistor applied with a predetermined voltage; and
a load circuit connected to the other of the source and the drain of the MOS transistor; and
a first voltage source being configured to supply a first operating voltage to a first operating circuit that outputs the input signal of the limiter circuit;
a second operating circuit fed with an output signal of the limiter circuit; and
a second voltage source being configured to supply a second operating voltage to the second operating circuit, the second operating voltage being lower than the first operating voltage,
wherein the gate of the MOS transistor is connected to the second voltage source.
13. A semiconductor apparatus comprising:
a limiter circuit comprising:
a differential amplifier circuit having a non-inverting and an inverting inputs, the inverting input fed with an input signal to the limiter circuit;
a driving circuit fed with an output of the differential amplifier, an output of the driving circuit connected to the non-inverting input of the differential amplifier;
a MOS transistor having a source, a drain and a gate, one of the source and the drain of the MOS transistor connected to the output of the driving circuit, the gate of the MOS transistor applied with a predetermined voltage; and
a load circuit connected to the other of the source and the drain of the MOS transistor;
a first voltage source being configured to supply a first operating voltage to a first operating circuit that outputs the input signal of the limiter circuit;
a second operating circuit fed with an output signal of the limiter circuit; and
a second voltage source being configured to supply a second operating voltage to the second operating circuit, the second operating voltage being lower than the first operating voltage,
wherein the gate of the MOS transistor is connected to the second voltage source.
14. A semiconductor apparatus comprising:
a limiter circuit to limit an output signal to a predetermined range comprising:
a differential amplifier circuit having a non-inverting and an inverting inputs, the inverting input fed with an input signal to the limiter circuit;
a driving circuit fed with an output of the differential amplifier; a feedback path being configured to connect an output of the driving circuit to the non-inverting input;
a switching device being configured to operate to limit an output signal level of the limiter circuit to a first predetermined limit value or less; and
a first voltage source being configured to supply a first operating voltage to a first operating circuit that outputs the input signal of the limiter circuit;
a second operating circuit fed with the output signal of the limiter circuit;
a second voltage source being configured to supply a second operating voltage to the second operating circuit, the second operating voltage being lower than the first operating voltage, and
a third voltage source being configured to supply a third operating voltage to the driving circuit,
wherein the switching device is disposed between the third voltage source and the non-inverting input.
15. The semiconductor apparatus according to claim 14 ,
wherein the switching device is a MOS transistor having a source, a drain and a gate,
one of the source and the drain of the MOS transistor is connected to the output of the driving circuit,
the other of the source and the drain of the MOS transistor is connected to the third voltage source, and
a voltage to define the first predetermined limit value is applied to the gate of the MOS transistor.
16. The semiconductor apparatus according to claim 15 , wherein the MOS transistor is a depletion type MOS transistor.
17. The semiconductor apparatus according to claim 14 , further comprising an amplifier inserted in the feedback path.