Pattern formation method
View Patent ↗After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.
1. A pattern formation method comprising the steps of:
forming a film including a material of absorbing moisture on a resist film;
performing pattern exposure by selectively irradiating said resist film with exposing light while supplying immersion solution onto said film; and
forming a resist pattern by developing said resist film after the pattern exposure.
2. The pattern formation method of claim 1 ,
wherein said material of absorbing moisture is hygroscopic compound or a rare earth compound.
3. The pattern formation method of claim 2 ,
wherein said rare earth compound is an oxide, a chloride, a sulfate, a nitrate, a hydroxide, an acetate, an octylate, yttrium oxide, neodymium oxide, cerium oxide, lanthanum oxide, scandium oxide, cerium chloride, ceric sulfate, ammonium ceric sulfate, cerium nitrate, ammonium cerium nitrate, lanthanum nitrate, cerium hydroxide, cerium acetate or cerium octylate.
4. The pattern formation method of claim 2 ,
wherein said film including a rare earth compound is a nonaqueous film.
5. The pattern formation method of claim 4 ,
wherein said nonaqueous film is an olefin film.
6. The pattern formation method of claim 5 ,
wherein said olefin film is a polyethylene film, a polypropylene film or a film of a copolymer of ethylene and propylene.
7. The pattern formation method of claim 1 ,
wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.