Wire-type semiconductor devices and methods of fabricating the same
Provided are relatively higher-performance wire-type semiconductor devices and relatively economical methods of fabricating the same. A wire-type semiconductor device may include at least one pair of support pillars protruding above a semiconductor substrate, at least one fin protruding above the semiconductor substrate and having ends connected to the at least one pair of support pillars, at least one semiconductor wire having ends connected to the at least one pair of support pillars and being separated from the at least one fin, a common gate electrode surrounding the surface of the at least one semiconductor wire, and a gate insulating layer between the at least one semiconductor wire and the common gate electrode.
1. A wire-type semiconductor device comprising:
at least one pair of support pillars protruding above a semiconductor substrate;
at least one fin protruding above the semiconductor substrate and having ends connected to the at least one pair of support pillars;
at least one semiconductor wire having ends connected to the at least one pair of support pillars and being separated from the at least one fin;
a common gate electrode surrounding the surface of the at least one semiconductor wire and covering an upper portion of the fin on the semiconductor substrate;
a first gate insulating layer between the at least one semiconductor wire and the common gate electrode; and
a second gate insulating layer between the at least one fin and the common gate electrode,
wherein the at least one semiconductor wire is formed above the at least one fin, and
end portions of the at least one semiconductor wire are exposed by the common gate electrode and are doped with first conductive type impurities.
2. The wire-type semiconductor device of claim 1 , wherein the at least one semiconductor wire is formed by etching the semiconductor substrate.
3. The wire-type semiconductor device of claim 1 , wherein the semiconductor substrate includes one of a bulk silicon wafer, a bulk germanium wafer, and a bulk silicon-germanium wafer.
4. The wire-type semiconductor device of claim 1 , wherein:
a plurality of fins are formed on the semiconductor substrate; and
the at least one semiconductor wire is formed above the plurality of fins.
5. The wire-type semiconductor device of claim 1 , wherein each of the support pillars includes a recess portion.
6. The wire-type semiconductor device of claim 1 , wherein:
the pair of support pillars is doped with the first conductive type impurities;
a portion of the at least one semiconductor wire surrounded by the common gate electrode is doped with second conductive type impurities; and
the second conductive type impurities have a conductivity opposite to the conductivity of the first conductive type impurities.
7. The wire-type semiconductor device of claim 1 , further comprising:
a device insulating layer on the substrate, the device insulating layer exposing the upper portion of the at least one fin on the semiconductor substrate.