IP Library Granted Patent US 7,498,556
Granted Patent B2
US 7,498,556 · App. 11/725,041 · Granted Mar 3, 2009

Image sensor module having build-in package cavity and the method of the same

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Quick Facts
Patent No.
US 7,498,556
App. No.
11/725,041
Granted
Mar 3, 2009
Kind
B2
Abstract

The present invention provides an image sensor module having build-in package cavity and the Method of the same. An image sensor module structure comprising a substrate with a package receiving cavity formed within an upper surface of the substrate and conductive traces within the substrate, and a package having a die with a micro lens disposed within the package receiving cavity. A dielectric layer is formed on the package and the substrate, a re-distribution conductive layer (RDL) is formed on the dielectric layer, wherein the RDL is coupled to the die and the conductive traces and the dielectric layer has an opening to expose the micro lens. A lens holder is attached on the substrate and the lens holder has a lens attached an upper portion of the lens holder. A filter is attached between the lens and the micro lens. The structure further comprises a passive device on the upper surface of the substrate within the lens holder.

Claims (25)

1. An image sensor module structure, comprising:

a substrate with a package-receiving cavity formed in an upper surface of said substrate and conductive traces formed within said substrate, wherein said substrate includes a contact metal formed thereon;

a package having an opening to expose a micro-lens area and a fan-out build up layer with terminal metal pads formed on a side edge of said package, said package being disposed within said package-receiving cavity;

a solder bridge formed on said terminal metal pads of said package and said substrate to communicate with said conductive trace through said contact metal;

a lens holder attached on said substrate, said lens holder having a lens attached to an upper portion of said lens holder; and wherein said package includes:

a base;

a die having said micro-lens area attached to said base;

a first material surrounding said die, wherein said surface of said first material is formed level with said die surface;

a dielectric layer formed on said die and said the first material, wherein said dielectric layer has an opening to expose said micro-lens and I/O pads;

a redistribution conductive layer (RDL) formed on said dielectric layer, wherein said RDL is coupled to said die and said terminal contact pads; and

a protective dielectric layer formed over said RDL, and having an opening to expose said micro-lens and terminal contact pads.

2. The structure of claim 1 , further comprising a terminal contact formed at said lower surface of said substrate for communicating electrical signals.

3. The structure of claim 1 , further comprising a solder ball formed at said lower surface of said substrate for fan out.

4. The structure of claim 1 , further comprising a passive device on said upper surface of said substrate within said lens holder.

5. The structure of claim 1 , further comprising an IR filter attached between said lens and said micro-lens.

6. The structure of claim 1 , wherein said dielectric layer includes an elastic dielectric layer.

7. The structure of claim 1 , wherein said dielectric layer comprises a silicone dielectric-based material, BCB or PI.

8. The structure of claim 7 , wherein said silicone dielectric-based material comprises siloxane polymers (SINR) or Dow Coming WL5000 series.

9. The structure of claim 1 , wherein said dielectric layer comprises a photosensitive layer.

10. The structure of claim 1 , wherein said RDL is made from an alloy comprising Ti/Cu/Au alloy or Ti/Cu/Ni/Au alloy.

11. The structure of claim 1 , wherein the material of said base includes epoxy type FR5, FR4, BT, PCB (printed circuit board), glass, ceramic, silicon, alloy or metal.

12. The structure of claim 1 , wherein the material of said substrate includes PCB.

13. The structure of claim 1 , further comprising a protective layer formed on said the micro-lens to prevent particle contamination.

14. The structure of claim 13 , the materials of said protective layer includes SiO2, Al2O3 or fluoro-polymer.

15. The structure of claim 13 , wherein said protective layer includes water repellent and oil repellent properties.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 27, 2023
From: ADL ENERGY CORP.
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 065957/0661 →
MERGER Recorded Sep 15, 2023
From: ADL ENGINEERING INC.; ADVANCED CHIP ENGINEERING TECHNOLOGY INC.
To: ADL ENGINEERING INC.
Reel/Frame 064926/0845 →
CHANGE OF NAME Recorded Sep 15, 2023
From: ADL ENGINEERING INC.
To: ADL ENERGY CORP.
Reel/Frame 064927/0462 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 15, 2007
From: WANG, WEN-KUN; CHANG, TUNG-HSIEN; LIN, DIANN-FANG; WANG, TUNG-CHUAN
To: ADVANCED CHIP ENGINEERING TECHNOLOGY INC.
Reel/Frame 019110/0319 →