Die backside wire bond technology for single or stacked die package
Methods and apparatus to provide die backside connections are described. In one embodiment, the backside of a die is metallized and coupled to another die or a substrate. Other embodiments are also described.
1. An apparatus comprising:
a first die having a first set of one or more die backside wire bond pads, wherein at least one of the first set of one or more wire bond pads is coupled to a first end of a through silicon via (TSV) through a die backside metal layer; and
a second die coupled between the first die and a package substrate, the second die having a second set of one or more wire bond pads, wherein a second end of the through silicon via is to be coupled to an active metal layer of the second die and at least one of the second set of one or more wire bond pads, wherein one or more of a third set of wire bond pads on the package substrate are to be directly coupled to one or more of the first set of one or more die backside wire bond pads and one or more of the second set of one or more die backside wire bond pads.
2. The apparatus of claim 1 , wherein the first die and the second die are coupled through a surface activated bonding layer.
3. The apparatus of claim 1 , wherein the first die and the second die are coupled through one or more solder bumps.
4. The apparatus of claim 1 , wherein the package substrate is coupled to the second die through a surface activated bonding layer.
5. The apparatus of claim 1 , further comprising one or more wire bonds to couple one or more pads of the first set of pads, the second set of pads, or the third set of pads.
6. The apparatus of claim 1 , further comprising a mold to mechanically couple one or more of the first die, the second die, or the substrate.
7. The apparatus of claim 1 , wherein at least one of the first die or the second die comprises one or more of: a processor, a memory device, a network communication device, or a chipset.
8. The apparatus of claim 7 , wherein the processor comprises one or more processor cores.
9. A method comprising:
metallizing a backside of a first die;
stacking the first die on a second die;
coupling the metallized backside of the first die to one or more of a first set of wire bond pads on the first die;
coupling a metallized layer of the second die to one or more of a second set of wire bond pads on the second die;
directly coupling one or more of a third set of wire bond pads on a package substrate to one or more of the first set of wire bond pads on the first die and one or more of the second set of wire bond pads on the second die, wherein one or more through silicon vias are to electrically couple the metallized layer of the second die and the metallized backside of the first die.
10. The method of claim 9 , further comprising flipping at least one of the first die or the second die.
11. The method of claim 9 , further comprising providing a mold to mechanically couple the first die and the second die to a substrate.
12. The apparatus of claim 1 , wherein backsides of the first die and the second die are to be thinned prior to metalizing the backsides of the first die and the second die.
13. The method of claim 9 , further comprising thinning backsides of the first die and the second die prior to metalizing the backsides of the first die and the second die.
14. The method of claim 9 , further comprising coupling a pair of the first, second, or third set of wire bond pads via a wire bond.
15. The method of claim 9 , wherein at least one of the first die or the second die comprises one or more of: a processor, a memory device, a network communication device, or a chipset.
16. The method of claim 15 , wherein the processor comprises one or more processor cores.
17. The method of claim 9 , further comprising thinning backsides of the first die and the second die prior to providing under fill between the second die and the package substrate.
18. The method of claim 9 , further comprising coupling the package substrate to the second die through a surface activated bonding layer.
19. The apparatus of claim 1 , wherein backsides of the first die and the second die are to be thinned prior to provision of under fill between the second die and the package substrate.