Semiconductor device
A semiconductor device includes a first transistor having a first gate oxide layer with a first thickness; a second transistor having a second gate oxide layer with a second thickness different from the first thickness; and at least one of a capacitor and a variable capacitance diode. The one of the capacitor and the variable capacitance diode includes a first electrode formed in a first area and a second area, a second electrode formed in the first area with the first gate oxide layer inbetween, and a third electrode formed in the second area with the second gate oxide layer inbetween.
1 . A semiconductor device, comprising:
a first transistor having a first gate oxide layer with a first thickness;
a second transistor having a second gate oxide layer with a second thickness different from the first thickness; and
at least one of a capacitor and a variable capacitance diode, said one of the capacitor and the variable capacitance diode including a first electrode formed in a first area and a second area, a second electrode formed in the first area with the first gate oxide layer inbetween, and a third electrode formed in the second area with the second gate oxide layer inbetween.
2 . The semiconductor device according to claim 1 , wherein said second electrode has a first comb shape, said third electrode having a second comb shape nested inside one another with the first comb shape.
3 . The semiconductor device according to claim 1 , further comprising a semiconductor substrate having the first area, the second area, and the third area.
4 . The semiconductor device according to claim 3 , wherein said semiconductor substrate has the second area disposed adjacent to the first area, said third area being disposed adjacent to the first area on a side opposite to the second area.
5 . The semiconductor device according to claim 3 , wherein said semiconductor substrate includes one of a silicon substrate, a silicon-on-insulator substrate, and a silicon-on-sapphire substrate.